Allicdata Part #: | SP8K3FU6TB-ND |
Manufacturer Part#: |
SP8K3FU6TB |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2N-CH 30V 7A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 7A 2W Surface ... |
DataSheet: | SP8K3FU6TB Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.43818 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 7A |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 11.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 10V |
Power - Max: | 2W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Base Part Number: | *K3 |
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SP8K3FU6TB is a type of transistor array which belongs to the family of field effect transistors (FETs), and more specifically to the class of metal-oxide-semiconductor FETs (MOSFETs). This type of transistor array is used in a wide variety of applications in both digital and analog circuits due to its impressive range of performance characteristics such as low noise, high speed switching and high voltage carrying capability. In this article, we’ll explore the application field and working principle of the SP8K3FU6TB transistor array.
The first use of SP8K3FU6TB transistor arrays is in analog circuits for signal conditioning and amplification. This type of transistor array has a wide operational bandwidth, providing superior signal fidelity in both analog and digital circuits compared to other FETs. Additionally, SP8K3FU6TB transistors have high input impedance, which provides excellent noise immunity and better signal integrity in high-frequency circuits.
The second major use of SP8K3FU6TB transistors is in digital switching circuits. The transistors’ low noise, high switching speed and high voltage carrying capability make them suitable for use in high-speed logic circuits. They can be used to create complex digital networks and can be used to perform high-speed multiplexing, Daisy-chain networking, tri-state switching and level shifting, among other digital applications.
The working principle of SP8K3FU6TB transistors is relatively simple. As with most FETs, SP8K3FU6TB transistors rely on an insulated gate which is charged to various levels to alter the current flow through the transistor. This gate is connected to the source and drain, and the voltage applied to the gate determines the amount of current that will flow through the transistor. As the gate voltage increases, more current can flow, and vice versa.
In addition to altering the amount of current that flows, SP8K3FU6TB transistors can also be used for voltage regulation. By increasing the voltage on the source or drain, the transistor can be used to reduce the current flow and keep the voltage output at a predetermined level. This is one of the most common uses of SP8K3FU6TB transistors and is used in power supplies and lighting technologies.
All in all, the SP8K3FU6TB transistors are a useful family of transistors, with a wide range of application fields and working principles. They are highly recommended for use in both digital and analog circuits, and they are becoming increasingly popular due to their impressive performance characteristics.
The specific data is subject to PDF, and the above content is for reference
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