Allicdata Part #: | 1727-6208-2-ND |
Manufacturer Part#: |
BCX51-16,115 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 45V 1A SOT89 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 1A 145MHz 1.3W Su... |
DataSheet: | BCX51-16,115 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.06615 |
2000 +: | $ 0.05954 |
5000 +: | $ 0.05623 |
10000 +: | $ 0.05127 |
25000 +: | $ 0.04796 |
50000 +: | $ 0.04410 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 2V |
Power - Max: | 1.3W |
Frequency - Transition: | 145MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | BCX51 |
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A transistor is a semiconductor device that can be found in a variety of electronic devices, such as computers, transceivers, amplifiers and digital signal processors. Most transistors used today are made from silicon, but there are also transistors made from germanium and gallium arsenide. The BCX51-16,115 is an NPN bipolar junction transistor (BJT) with a high current gain. It is primarily used in high frequency switching applications and signal microwave amplifiers.
What is a Bipolar Junction Transistor?
A bipolar junction transistor (BJT) is a three-terminal semiconductor device that can act as either an amplifier or a switch. It has three terminals, the Base (B), Collector (C) and Emitter (E). The current gain of a BJT depends on the ratio of its collector current to base current. The base current is typically small and is used to control the flow of current through the transistor. The collector current is much larger than the base current and the current gain is typically about 20 to 500.
The BCX51-16,115 Application Field and Working Principle
The BCX51-16,115 is an NPN type BJT which is recommended in applications where high current gain is required. It is mainly used in high frequency switching applications as well as microwave amplifiers. The BCX51-16,115 has a collector voltage of 120V and a breakdown voltage of 105V, making it a suitable choice for high voltage applications. The maximum collector current is 1.2A and the maximum collector power dissipation is 1.25W. The minimum thermal resistance between junction and ambient is 2.5 K/W.
The working principle of a BJT is simple. The base-emitter junction consists of two P-N junctions connected in series. When a voltage is applied across the base-emitter junction, a current will flow through the transistor (this is called the base current). If the base current is increased, the collector current will increase exponentially. This can be used to control the flow of current through the transistor, thus making it a switch or an amplifier.
The BCX51-16,115 is a popular choice for high frequency switching applications due to its high current gain. In this type of application, the BTX51-16,115 is used to rapidly switch a current or voltage on and off. This allows the circuit to process signals of very high frequencies, up to 3GHz. The BCX51-16,115 is also used in microwave amplifiers where it is used to amplify very high frequency signals. This is due to its excellent gain and high frequency response.
Conclusion
The BCX51-16,115 is a high current gain NPN type BJT which is suitable for high frequency switching and microwave amplifiers. It has a breakdown voltage of 105V and a maximum collector current of 1.2A. Due to its excellent gain and high frequency response, it is a popular choice for high frequency applications. If you are looking for a reliable transistor for your application, the BCX51-16,115 is the one to consider.
The specific data is subject to PDF, and the above content is for reference
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