SP8K5TB Allicdata Electronics

SP8K5TB Discrete Semiconductor Products

Allicdata Part #:

SP8K5TBTR-ND

Manufacturer Part#:

SP8K5TB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2N-CH 30V 3.5A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 3.5A 2W Surfac...
DataSheet: SP8K5TB datasheetSP8K5TB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Base Part Number: *K5
Description

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The SP8K5TB is a type of high Power Field Effect Transistor (FET) array that is used for a variety of applications, including amplification, switching and power conversion. It is also used to create high-precision analog circuits, such as voltage references and current sources. The application field and working principle of the SP8K5TB can be divided into two parts - how it works in FETs and how it works in MOSFETs.

FET Arrays

A FET array is an array of Field Effect Transistors (FETs) on a single substrate. FETs are semiconductor devices that rely on the principles of gate impedance, electrostatic control of current flow, and current-voltage transfer to control the flow of electrical current. The SP8K5TB is a type of FET array, which means it is composed of multiple FETs, each with a separate gate terminal and drain terminal. The gate voltage of each FET can be independently adjusted, allowing them to be used for both amplification and switching applications.

MOSFET Arrays

MOSFETs are a type of field effect transistor (FET) with a metal oxide semiconductor (MOS) gate structure. They are similar to FETs in that they rely on gate impedance, electrostatic control of current flow, and current-voltage transfer to control the flow of electrical current. The SP8K5TB is a type of MOSFET array, which means it is composed of multiple MOSFETs, each with a separate gate terminal and drain terminal. The gate voltage of each MOSFET can be independently adjusted, allowing them to be used for both amplification and switching applications.

Working Principle of SP8K5TB

The working principle of the SP8K5TB is based on the fact that when a voltage is applied to the gate, an electric field is created between the gate and the source terminal, modulating the current flow through the channel. This principle can be used for both FETs and MOSFETs, which allows the SP8K5TB to be used for a variety of applications.

Applications of SP8K5TB

The SP8K5TB can be used for a variety of applications, including power conversion, switching, amplification, and audio processing. It is also used to create high-precision analog circuits, such as voltage references and current sources. In addition, the SP8K5TB can be used to improve the efficiency of power semiconductor designs, as well as to reduce the size and cost of power supply modules.

Conclusion

The SP8K5TB is a type of FET and MOSFET array that is used for a variety of applications. It relies on the principles of gate impedance, electrostatic control of current flow, and current-voltage transfer to control the flow of electrical current. The SP8K5TB can be used for power conversion, switching, amplification, and audio processing, as well as to create high-precision analog circuits.

The specific data is subject to PDF, and the above content is for reference

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