SI9926BDY-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI9926BDY-T1-E3TR-ND |
Manufacturer Part#: |
SI9926BDY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 20V 6.2A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 6.2A 1.14W Sur... |
DataSheet: | SI9926BDY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8.2A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.14W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI9926 |
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SI9926BDY-T1-E3 is an array of Field-Effect Transistors (FETs) designed to amplify or switch electronic signals. This type of Transistor array is similar to the properties of a General-Purpose Transistor and improves the switching speed of electronic signals. In this article, we will discuss the application field and working principle of the SI9926BDY-T1-E3 array.
Application Field
The SI9926BDY-T1-E3 FET array can be used for a variety of applications, ranging from high-speed switching, voltage amplification, and signal transmission. The FET array exhibits excellent high-frequency characteristics, making it particularly suitable for signal transmission applications. In addition, it has low voltage, making it suitable for battery-operated applications such as low-power digital logic and RF devices. In addition, its high-speed switching capability makes it ideal for power management applications.
Working Principle
The SI9926BDY-T1-E3 FET array is composed of a number of FETs connected in a series. Each FET has two terminals, the source and the drain. The source terminal is connected to the power supply and the drain is connected to a load. Assume that the power supply is positive and the load is negative, then the FETs in the array will turn on when a positive voltage is applied to the gate. This allows current to flow from the source to the drain and amplify or switch electronic signals.
When the gate voltage is zero, the FET array acts as an open switch, preventing the current from flowing from the source to the drain. This is known as the cut-off mode and is used for switching off the device. On the other hand, when the gate voltage is large enough, the FET array acts as a closed switch, allowing current to flow between the source and the drain. This is known as the saturation mode and is mainly used for amplifying the signal.
The SI9926BDY-T1-E3 FET array is capable of handling large input voltages while maintaining low on-resistance levels, making it an ideal choice for applications requiring high-speed and high-precision signal transmission. The FET array is also capable of handling high power and a wide frequency range, making it suitable for various applications. The FET array is also capable of operating in both the linear and saturation regions, making it highly versatile.
Conclusion
The SI9926BDY-T1-E3 Field-Effect Transistor (FET) array is a highly versatile and robust device that is suitable for a wide range of applications such as signal transmission, voltage amplification, and power management. Its ability to handle high input voltages and low on-resistance levels make it an ideal choice for signal transmission applications. Moreover, its high-speed switching capability makes it ideal for power management applications.
The specific data is subject to PDF, and the above content is for reference
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