SI9933BDY-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI9933BDY-T1-E3TR-ND |
Manufacturer Part#: |
SI9933BDY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 3.6A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3.6A 1.1W Surf... |
DataSheet: | SI9933BDY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI9933 |
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The SI9933BDY-T1-E3 is a high-current, low-side, N-Channel MOSFET Array manufactured by Vishay Intertechnology. It is a cost-effective solution for driving low-side, power switch applications requiring high-side and low-side current-handling ability. The SI9933BDY-T1-E3 is a high-current, low-side N-Channel MOSFET Array with a maximum current rating of 8 amps.
The SI9933BDY-T1-E3 features advanced process technology and low on-resistance coupled with enhanced protection circuitry and robust packaging. The combination of low power dissipation and fast switching time allows designers to maximize the efficiency in their power designs. The array is capable of delivering very low on-state resistance and low gate capacitance. This enables excellent power dissipation and fast switching speed.
The SI9933BDY-T1-E3 is suitable for applications such as motor control, low signal switching, audio switching and DC-to-DC converters. The device is designed to provide high current-handling capability in a small package. The device also provides very low on-state resistance and fast switching speed.
The SI9933BDY-T1-E3 has a unique feature called the “Wake-On-Signal” feature. This feature allows the user to trigger the device on and off at specified intervals. The user can specify the on and off intervals using the Wake-On-Signal input pin. The interval can be specified from a few microseconds to fraction of seconds.
The working principle of the SI9933BDY-T1-E3 is based on the Field Effect Transistor (FET) technology. FETs are voltage controlled devices and the current flow through them are controlled by the applied voltage. The SI9933BDY-T1-E3 is a combination of two N-Channel MOSFETs connected in series. The combination of two MOSFETs allows the device to handle more current, giving excellent current handling ability. The gate of the MOSFET is driven by an external voltage source and the higher the voltage applied on the gate, the greater is the channel conductance.
The SI9933BDY-T1-E3 features protection circuitry to protect the device from over current, over-temperature and short-circuit conditions. The device also includes latch-up protection circuitry to prevent latch-up conditions. The protection circuitry ensures that the device functions in a safe and reliable manner.
In conclusion, the SI9933BDY-T1-E3 is a high-current, low-side N-Channel MOSFET Array manufactured by Vishay Intertechnology. The device features advanced process technology, low on-state resistance, robust packaging and enhanced protection circuitry. The device is suitable for power switch applications requiring high-side and low-side current-handling ability. The device provides very low on-state resistance and fast switching speed. The Wake-On-Signal feature allows the user to trigger the device on and off at specified intervals. The device operates on the principle of the Field Effect Transistor technology and protection circuitry is built into the device to ensure safe and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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