MMUN2113LT1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	246mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMUN21**L

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Introduction

The MMUN2113LT1G is a class of SOT-23 transistor, known as a Small Outline Transistor (SOT). It is a pre-biased and single type bipolar junction transistor (BJT). This type of transistors has several advantages in comparison to other types of transistors. Its primary advantages are its small size, wide operating voltage range and high switching speed.

Application Field

The MMUN2113LT1G is most commonly used in low voltage and low current electronic devices, such as circuits with small wattage and digital circuits. Its small size is beneficial mostly for applications where the space requirements are tight. It can be used for amplifying, switching, waveform shaping and signal buffering in audio and radio amplifiers and general-purpose circuits.

Working Principle

The MMUN2113LT1G is a PNP type transistor, which means it has two P-type layers and one N-type layer. Its three terminals are labeled as the Collector (C), the Base (B) and the Emitter (E). A current flowing through the Base to the Emitter creates an amplified current at the Collector. The amount of current amplification is determined by the current Gain of the transistor.An electric current of around 1mA is supplied to the Base of the transistor in order to create an amplified current at the Collector. When the Base is supplied with a current, an electric field is created between the Base and the Collector. This electric field causes holes (positively charged particles) on the Base to move towards the Collector. As a result, electrons (negatively charged particles) from the Emitter are attracted between the Base and the Collector. This combined movement of holes and electrons cause a current to flow from the Collector to the Emitter, which is then amplified.

Conclusion

The MMUN2113LT1G is a small outline transistor that is used for small current and low voltage applications. It is a pre-biased and single type bipolar junction transistor. Its primary advantages are its small size, wide operating voltage range and high switching speed. It is most commonly for amplifying, switching, waveform shaping and signal buffering in audio and radio amplifiers and general-purpose circuits. The working principle of the MMUN2113LT1G involves the production of an electric field which allows the holes and electrons to move between its terminals, which then creates an amplified current at the Collector.

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