IRFS4620TRLPBF Discrete Semiconductor Products

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IRFS4620TRLPBF is a single-type MOSFET (metal oxide semiconductor field effect transistor) made of conduction layer, gate, source and drain by STMicroelectronics, a global semiconductor leader. It is part of the STripFET F7 series and is designed for applications requiring high blocking voltage capability and high operating temperature. The device offers a very low RDS(on) value, a high current-handling capability, low gate charge and very fast switching performance.

The IRFS4620TRLPBF is an ideal choice for applications that require high blocking voltage and high operation temperature with stable breakdown characteristics. It provides an efficient way to switch high power with very low voltage drop due to its low RDS(on) value and fast switching speed. Besides, the device operates over a temperature range ranging from -55C to 150C, making it suitable for wide range of temperature-sensitive applications.

The IRFS4620TRLPBF is widely used in DC to DC converters, synchronous buck converters, motor drives, automotive motor control and lighting applications and high-current SMPS. For example, it is available in a TO-220 package, so it is a suitable choice for conducting low- and medium-power applications. Its low gate charge and fast switching speeds make them ideal for high frequency DC-DC converters, motor drive circuits and welders. As the device has to handle high blocking voltage and high operation temperatures, it can account for high current processes.

The working principle of the IRFS4620TRLPBF can be defined in a simplified way. Its a MOSFET-based transistor, with a metal oxide as the gate region and source and drain terminals. It works in the same way as a metal-oxide semiconductor device. When the voltage sourced on the gate terminal is raised, the current flows through the device. This results in the electrical charge which is stored in the gate region and creates a junction field effect between the gate and the drain-source terminals. This increases the resistance between the source and the drain terminal and restricts further current flow through the device.

The gate-source voltage (VGS) is one of the most important factors that determine the performance of MOSFETs. In IRFS4620TRLPBF, its gate-source threshold voltage (VGS-th) lies in the range from -2V to -4V, which makes it suitable for different types of applications that require different gate-source voltage. Furthermore, the device offers low gate charge, low RDS(on), low E-off and high switching speed characteristics.

In conclusion, the IRFS4620TRLPBF is a single-typed MOSFET ideal for a variety of applications due to its wide range of temperature, high blocking capacity and high operating temperature. The device provides a very low RDS(on) value, fast switching speeds and a low gate charge. Its gate-source voltage (VGS) range is suitable for different types of applications. It is especially good for DC to DC converters, motor drives and automotive motor control and lighting applications.

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