FDPF8N50NZU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDPF8N50NZU is a type of power field effect transistor (FET) which can be used to provide efficient circuits with fast switching times. It is a famous member of Infineon’s CoolMOS Family, a cost-effective high-voltage power MOSFET family. FDPF8N50NZU is particularly suitable for use in applications in the power range of 700V – 850V. This particular N-Channel MOSFET is especially capable of operating at higher temperatures than other MOSFETs.

FDPF8N50NZU is one of the best high-performance MOSFETs. It offers an average drain-source ON resistance of 125mohm with a drain-source breakdown voltage of 950V, TrenchMOS technology, and standard packaged in a TO-220FP. This device is appropriate for use in a variety of applications, including power switching, motor drives, light dimming, lighting and power supplies.

FDPF8N50NZU has three terminals which include drain, gate and source. The purpose of the gate terminal is to control the amount of current flowing between the drain and source terminals. The source terminal is the negative terminal of the MOSFET, while the drain terminal is the positive terminal. When there is a voltage applied to the gate terminal, it turns the device "on" by allowing current to flow between drain and source.

To turn the device "off", no voltage is applied to the gate terminal, blocking the flow of current and resulting in a non-conductive state. This feature of the FDPF8N50NZU makes it a versatile and efficient device for power switches, as it can be easily switched between "on" and "off" states. The MOSFET can also be used for low noise-level applications, as it emits low noise when switching.

FDPF8N50NZU has numerous advantages and benefits over conventional power FETs. For instance, the device is superior to other FETs in terms of power, temperature and size. Moreover, it can be used in high temperature applications and is compact compared to other MOSFETs, while offering very low Rds(on) and fast switching times. Furthermore, the device can be used in high current applications, making it an ideal device for many types of circuits.

In conclusion, FDPF8N50NZU is an extremely efficient and reliable MOSFET which enables fast and efficient switching for a wide range of applications. This device is perfect for use in numerous applications, ranging from high current and temperature applications to low noise-level applications, due to its small size, lower resistance and faster switching speed compared to other FETs. Therefore, FDPF8N50NZU is one of the most popular and highly recommended power MOSFET devices among engineers.

The specific data is subject to PDF, and the above content is for reference