FDPF39N20 Allicdata Electronics
Allicdata Part #:

FDPF39N20-ND

Manufacturer Part#:

FDPF39N20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 39A TO-220F
More Detail: N-Channel 200V 39A (Tc) 37W (Tc) Through Hole TO-2...
DataSheet: FDPF39N20 datasheetFDPF39N20 Datasheet/PDF
Quantity: 2909
Stock 2909Can Ship Immediately
Specifications
Series: UniFET™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 66 mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 25V
FET Feature: --
Power Dissipation (Max): 37W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
Description

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The FDPF39N20 is a silicon N-channel enhancement-mode MOSFET available in a TO-220F (Full Pack) package. It has a drain-source breakdown voltage of 40V and a drain current capacity of 39A. It is normally used to switch a load or act as a linear amplifier in a range of applications.

Application Field of FDPF39N20

The high efficiency FDPF39N20 MOSFET can be used in DC-DC converters, frequency converters, AC/DC converters, and DC/DC converters. It is also used in audio power amplifiers, automotive power systems, motor-drive circuits, power switches, and as an oscillator in switching power supplies. Besides, this MOSFET can be used in high-power motor control systems and power inverters.

With it’s high temperature operation capability due to its low resistance, it can be used in systems that generate a large amount of heat. Furthermore, the low on-state resistance makes the FDPF39N20 MOSFET well-suited for applications such as hard switching, high switching frequencies, and high-speed commutation.

Working Principle of FDPF39N20

The mode of operation of the FDPF39N20 MOSFET is based on the operation of a field-effect transistor (FET). A FET is a three terminal device consisting of a source, a drain, and a gate. When there is a potential difference between the source and drain, an electric field is generated. This electric field modulates the conductivity of the channel between the source and drain, and reduces the current flow from the drain.

The FDPF39N20 MOSFET is an N-channel type, meaning that the electric field established between the source and the drain is negative. This causes electrons to be attracted to the drain, thus increasing the conductivity of the channel between source and drain, and allowing more current to flow between the drain and the source.

The amount of current that passes through the FDPF39N20 MOSFET is determined by the voltage applied to the gate terminal. When a voltage is applied to the gate, it modulates the existing electric field, and changes the conductivity of the channel between the source and drain. The higher the voltage applied to the gate, the more current that passes through the FDPF39N20 MOSFET.

The FDPF39N20 MOSFET also has a very low voltage drop, which allows it to act as a high efficiency switch in various power control applications. The low voltage drop also means more power is available to the load, which can lead to more efficient operation and increased savings.

Conclusion

The FDPF39N20 MOSFET is a high-efficiency N-channel enhancement-mode device that has a wide range of applications. It is used in DC-DC, frequency and AC/DC converters, audio power amplifiers, motor-drive circuits, and power switches. It has a low on-state resistance and a low voltage drop, so it can act as an efficient switch in power control applications. Additionally, its high temperature operation capability allows it to be used in systems that generate high amounts of heat.

The specific data is subject to PDF, and the above content is for reference

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