FDPF18N50T

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FDPF18N50T is a single-high voltage field-effect transistor with a drain current of up to 18A, a drain source voltage of up to 500V and a gate source break-down voltage of > 16V. It has a lower on-resistance than traditional MOSFETs, making it suitable for a wide range of high-power applications. The FDPF18N50T is manufactured by Fairchild and is available in TO-3, SOT-223 and SOP-8 packages.

Field-effect transistors (FETs) are solid-state devices that use an electric field to control current flow. FETs have three main terminals: the gate, the drain, and the source. The flow of current is controlled by the voltage applied to the gate terminal. FETs are available in two main types: MOSFETs and JFETs.

MOSFETs are insulated-gate FETs, which means that the voltage applied to the gate controls the flow of current through the channel between the source and the drain. In operation, the channel is neither on nor off, but is partially conducting. The resistance of this partially conducting channel is the “on-resistance”, and is determined by the voltage applied to the gate. Higher gate voltages make the channel more conducting, while lower gate voltages make the channel more resistant.

The FDPF18N50T is a high-voltage MOSFET with a built-in source-drain diode. This diode is used to protect the MOSFET from being damaged by reverse-polarity supply voltages. A high on-resistance means that the transistor has a better current-handling capability, enabling the FDPF18N50T to handle currents of up to 18A. It also has a gate source break-down voltage of >16V, which makes it suitable for applications requiring high voltage levels.

The FDPF18N50T can be used in a variety of applications, including high-power DC–DC converters, motor controllers, switching power supplies, DC–AC inverters, solar power systems, and battery packs. It is particularly suitable for applications in electric vehicles, due to its high on-resistance and high drain-source voltage.

The FDPF18N50T is easy to use, as it has an integrated source-drain diode. This diode helps protect the MOSFET from any reverse-polarity voltage, ensuring that the device continues to operate reliably. The FDPF18N50T also has an internal thermal shutdown, which prevents the device from being damaged by excessive heat.

In conclusion, the FDPF18N50T is an ideal choice for a variety of high-power applications that require a high on-resistance and high-drain/source voltage. The device offers a low on-resistance, allowing it to handle currents of up to 18A, and it is easy to use thanks to its built-in source-drain diode. The FDPF18N50T is available in TO-3, SOT-223 and SOP-8 packages, making it suitable for a variety of applications.

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