FDPF20N50FT Allicdata Electronics
Allicdata Part #:

FDPF20N50FT-ND

Manufacturer Part#:

FDPF20N50FT

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 20A TO-220F
More Detail: N-Channel 500V 20A (Tc) 38.5W (Tc) Through Hole TO...
DataSheet: FDPF20N50FT datasheetFDPF20N50FT Datasheet/PDF
Quantity: 7070
Stock 7070Can Ship Immediately
Specifications
Series: UniFET™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 260 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3390pF @ 25V
FET Feature: --
Power Dissipation (Max): 38.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
Description

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The FDPF20N50FT is a type of field effect transistor (FET) commonly used in a variety of applications.

The \'F\' of FDPF20N50FT stands for field effect transistors, and the \'D\' stands for insulated gate. It is an enhancement-mode vertical double-diffused metal oxide semiconductor (DMOS) FET. An enhancement-mode field effect transistor provides no current conduction until a positive voltage is applied to its gate; the greater the applied voltage, the higher the conduction.

Field effect transistors like FDPF20N50FT are used for power switching and amplification applications demanding high performance and circuit flexibility. Highly efficient, these transistors switch very fast, making them suitable for a variety of applications like power switching, load switching and sensing, as well as amplifier transistors.

The characteristics of FDPF20N50FT make it suitable for a wide range of applications, including motor control, synchronous rectification, DC-DC conversion, audio, power amplifying, switching, and other power applications.

This transistor operates with an enhanced voltage of 50 volts, a drain current of 20 amps and a drain source on resistance of 0.004 ohms. The FDPF20N50FT transistor is capable of operation at temperature ranges as high as 175° Celsius. This makes it suitable for a variety of applications, from automotive to consumer electronics.

The working principle of FDPF20N50FT is based on the fact that by applying a charge to the gate electrode, one can control the current flow in a channel between the source and the drain. This process of controlling the current flow is known as transistor action. When the gate voltage is increased, more current will flow; conversely, when the gate voltage is decreased, less current will flow. In this way, the FDPF20N50FT enables the generation of amplifying or switching action.

The FDPF20N50FT is an enhancement-mode N-channel MOSFET that can be used for power switching, load switching and sensing, as well as for audio power amplification applications. It offers excellent switching performance characteristics to meet the needs of modern power conversion and motor control applications. This FET is an ideal choice for applications requiring current handling capability and low on-resistance.

In summary, FDPF20N50FT is a common field effect transistor (FET) used in a variety of applications. It is an enhancement-mode N-channel MOSFET that has excellent switching performance characteristics and is suitable for a wide range of applications. It requires a gate voltage to be applied in order to control the current flow in a semiconductor channel between the source and drain, and has a drain source on-resistance of 0.004 ohms.

The specific data is subject to PDF, and the above content is for reference

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