Allicdata Part #: | APT25GT120BRDQ2G-ND |
Manufacturer Part#: |
APT25GT120BRDQ2G |
Price: | $ 6.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 54A 347W TO247 |
More Detail: | IGBT NPT 1200V 54A 347W Through Hole TO-247 [B] |
DataSheet: | APT25GT120BRDQ2G Datasheet/PDF |
Quantity: | 68 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 6.24330 |
10 +: | $ 5.61708 |
25 +: | $ 5.11787 |
100 +: | $ 4.61853 |
250 +: | $ 4.24406 |
500 +: | $ 3.86957 |
Series: | Thunderbolt IGBT® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 54A |
Current - Collector Pulsed (Icm): | 75A |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 25A |
Power - Max: | 347W |
Switching Energy: | 930µJ (on), 720µJ (off) |
Input Type: | Standard |
Gate Charge: | 170nC |
Td (on/off) @ 25°C: | 14ns/150ns |
Test Condition: | 800V, 25A, 5 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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APT25GT120BRDQ2G application field and working principle
APT25GT120BRDQ2G belongs to the family of single IGBTs. It is widely used in high power switching applications thanks to its advanced design and its excellent performance.
Application field
APT25GT120BRDQ2G is widely used in switching applications because of its outstanding switching performance. It is suitable for high power applications such as induction heating, power switches and drives, Adjustable Speed Drives (AC and BLDC) and Inverters. It is also widely used in a variety of electronic power devices in industrial appliances and consumer electronics.
Special features
The APT25GT120BRDQ2G features a low On-state voltage, which helps reduce switching loss and improve overall efficiency. The high current rating makes it suitable for a wide range of applications. Its design also features a negative temperature coefficient of on-state voltage, providing excellent temperature control and reliable operation.
Working principle
The APT25GT120BRDQ2G is a single IGBT that works based on the operating principle of a metal-oxide semiconductor field-effect transistor (MOSFET). When a positive voltage is applied to the gate of the device, an electric field builds up between the gate and the source, which creates a conductive path for current to flow between the two terminals. This current then passes through the IGBT and into the load, providing power to it. By regulating the voltage applied to the gate, the device can be used to control the amount of power supplied to the load.
Advantages of APT25GT120BRDQ2G
APT25GT120BRDQ2G has several advantages over other IGBTs, such as its excellent switching performance, low On-state voltage and high current ratings. Additionally, the device has excellent reliability and long-term stability. It is also a cost-effective solution, making it attractive for high power applications.
Conclusion
APT25GT120BRDQ2G is a high-performance single IGBT suitable for a variety of high-power switching applications. Thanks to its low On-state voltage and high current ratings, the device offers excellent performance and reliability. Additionally, it is a cost-effective solution with long-term stability, making it one of the most popular IGBTs in the market.
The specific data is subject to PDF, and the above content is for reference
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