IRFSL4310ZPBF Allicdata Electronics
Allicdata Part #:

IRFSL4310ZPBF-ND

Manufacturer Part#:

IRFSL4310ZPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 120A TO-262
More Detail: N-Channel 100V 120A (Tc) 250W (Tc) Through Hole TO...
DataSheet: IRFSL4310ZPBF datasheetIRFSL4310ZPBF Datasheet/PDF
Quantity: 444
Stock 444Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V
FET Feature: --
Power Dissipation (Max): 250W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Description

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IRFSL4310ZPBF is an N-channel MOSFET with a Peak Drain Current (ID) of 43A, and a fast switching speed. Its maximum Drain-Source Voltage (VDS) is 60V, and its maximum gate Source Voltage (VGS) is 20V. It is a single N-channel MOSFET which has numerous applications in automotive, industrial, and consumer electronics. The extremely low RDS(on) makes it suitable for high-current load switch and current sensing applications, such as automotive electronic power steering applications and DC motor drives.

The working principle of N-channel MOSFET IRFSL4310ZPBF, is the same as any other MOSFET. It is based on the capacitive coupling of the gate terminal which alters the conductivity of the channel connecting the drain and source terminals. When a positive voltage is applied to the gate terminal, a thin conducting layer is formed which lowers the resistance between the drain and source terminals, allowing current to flow. When a negative voltage is applied, the conducting layer is broken, thus increasing the resistance and isolating the drain and source terminals. This process occurs almost instantaneously, making MOSFETs the best choice for high speed switching applications.

The IRFSL4310ZPBF is an ideal choice for high current switching applications due to its low RDS(on). RDS(on) is the resistance which appears between source and drain when a positive voltage is applied to the gate. A low RDS(on) MOSFET like this helps to reduce power loss in the device, allowing it to handle higher currents with less loss. This makes it ideal for applications such as DC motor drives, and automotive electronic power steering applications.

The IRFSL4310ZPBF is widely used in many automotive, industrial, and consumer electronics applications. It is commonly used in automotive Electronic Power Steering systems, as the switching component in switches and relays, as well as in home entertainment systems. It is also a great choice for DC motor drives, LED lighting, and power supplies.

In conclusion, the IRFSL4310ZPBF is an ideal choice for high current switching applications due to its low RDS(on) and fast switching speed. It is an N-channel MOSFET with a Peak Drain Current (ID) of 43A, and a maximum Drain-Source Voltage (VDS) of 60V, making it suitable for a wide range of automotive, industrial, and consumer electronic applications. Due to its versatility and its excellent performance characteristics, the IRFSL4310ZPBF has become a popular choice for many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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