DTA114GKAT146 Discrete Semiconductor Products |
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| Allicdata Part #: | DTA114GKAT146TR-ND |
| Manufacturer Part#: |
DTA114GKAT146 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS PREBIAS PNP 200MW SMT3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: |  DTA114GKAT146 Datasheet/PDF |
| Quantity: | 3000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Not For New Designs |
| Moisture Sensitivity Level (MSL): | -- |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max): | 500nA (ICBO) |
| Frequency - Transition: | 250MHz |
| Power - Max: | 200mW |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SMT3 |
| Base Part Number: | DTA114 |
Description
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The DTA114GKAT146 Transistor is a bipolar junction transistor with pre-biased single configuration. It is catered to handle extended temperature ranges and offers very low flow-through current, thus making it ideal for applications that require an exceptional level of reliability and performance. With the combination of its ease of use and flexibility, this device is well-suited for high performance and design accuracy applications.The DTA114GKAT146 is built using two p-n junctions which are connected in either common-base or common-emitter configuration. These two junctions form a three-terminal device that includes one n-type material, one p-type material, and one gate terminal. The gate terminal acts as a control electrode, allowing the current to flow through the transistor or blocking it completely, depending on the voltage passed to the gate. This particular model offers a low supply voltage range of 1 to 8 V, and is capable of passing a maximum current of 150 mA peak.The DTA114GKAT146 is pre-biased for quick and easy circuit assembly, and features an internally-operated current amplifier with a gain of 900 MHz. This makes the device suitable for applications that require a low noise level and high-level audio processing. The enhanced combination of the low noise and high-level audio processing capabilities allows the device to be used in a variety of applications involving digital audio processing, video systems, automotive audio systems, home and professional audio, and medical systems.In terms of its working principle, the DTA114GKAT146 utilizes the phenomenon of bipolar junction transistors (BJTs) to amplify, switch, or rectify signals. When a control voltage is applied to the gate terminal of the transistor, it will control and regulate the amount of current flowing across the two junctions. This is done in two ways: through an increase in current by increasing the amount of base current, or a decrease in current by decreasing the amount of base current. In this way, the device can be used to amplify, switch, or rectify low level and high level signals in a reliable and efficient manner.The DTA114GKAT146 is thus an ideal choice for many applications that require fast switching and high-level audio processing. Its high gain capabilities, low noise performance, and ability to handle extended temperature ranges, makes it a valuable asset for many design engineers.
The specific data is subject to PDF, and the above content is for reference
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