DTA114TUAT106 Allicdata Electronics

DTA114TUAT106 Discrete Semiconductor Products

Allicdata Part #:

DTA114TUAT106TR-ND

Manufacturer Part#:

DTA114TUAT106

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 200MW UMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA114TUAT106 datasheetDTA114TUAT106 Datasheet/PDF
Quantity: 3000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 3000Can Ship Immediately
Specifications
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3
Base Part Number: DTA114
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Description

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The DTA114TUAT106 is a single, pre-biased bipolar junction transistor (BJT) designed for use in high-performance analog and digital applications. It can be used in circuits such as power amplifiers, voltage regulators, and transimpedance amplifiers. The device features leading-edge performance and is rated at a maximum voltage of 12V, as well as a dielectric withstanding voltage of 175V.

The DTA114TUAT106 has a single pre-biased structure, allowing it to be used in high-speed digital applications. The pre-biased structure enables the transistor to achieve a low collector-emitter voltage drop, minimizes the turn-on power, and ensures a fast turn-on. As a result, the DTA114TUAT106 is highly efficient, with a minimal power dissipation requirement.

The transistor\'s working principle is based on the way a charged and uncharged PN junction behaves in an electrical field. When a voltage is applied to the junction, the electrical field affects the PN junction, and current begins to flow. This current is known as the saturation current, and it is what enables the transistor to switch on and off rapidly.

The DTA114TUAT106 features a high breakdown voltage, low on-resistance, and low capacitance. These features make it suitable for use in high-frequency and high-voltage applications, as well as applications that require high current operation. In addition, the device can be used in analog and digital applications, making it an ideal choice for a variety of designs.

The DTA114TUAT106 can be used in a range of analog and digital applications, including power amplifiers, voltage regulators, and transimpedance amplifiers. It is also suitable for use in motor control applications and sensor interfaces. Additionally, the device is able to handle high currents, making it ideal for applications that require high-current operation.

In summary, the DTA114TUAT106 is a single, pre-biased bipolar junction transistor that is designed for use in high-performance analog and digital applications. It offers leading-edge performance, a high breakdown voltage, low on-resistance, and low capacitance. Additionally, the device is able to handle high currents, making it suitable for a range of applications. As such, the DTA114TUAT106 is a versatile and reliable component that can be used in a variety of designs.

The specific data is subject to PDF, and the above content is for reference

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