SI4427BDY-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4427BDY-T1-GE3CT-ND |
Manufacturer Part#: |
SI4427BDY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 9.7A 8SOIC |
More Detail: | P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount |
DataSheet: | SI4427BDY-T1-GE3 Datasheet/PDF |
Quantity: | 2493 |
Series: | TrenchFET® |
Packaging: | Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 12.6A, 10V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 4.5V |
Vgs (Max): | ±12V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The SI4427BDY-T1-GE3 is a P-Channel, Logic Level, Enhancement Mode Field Effect Transistor (FET) designed with a thin die and TrenchGate structure. It is commonly used as the input device in low voltage, low-rush and low-power applications. The device can operate from a variety of input voltages, from a Vgs of -4.5V to -20V.
Due to its thin die and TrenchGate structure, the SI4427BDY-T1-GE3 has a very low Rds(on) value, allowing for superior switching performance with fast switching times and low input gate capacitance. Additionally, the thin die makes mounting and soldering easier if the device is used in surface mount applications. The device also has an improved avalanche ruggedness which prevents it from breaking down during extreme temperature changes.
The working principle of the SI4427BDY-T1-GE3 is like any other FET in that it is controlled by a voltage (gate-source voltage, Vgs). All FETs are three terminal, voltage-controlled devices. The gate terminal requires a voltage, usually ground, to turn the device on, while other optional terminals, such as the body and source, control the channel width and intensity of the current flow through the device.
In enhancement mode, the SI4427BDY-T1-GE3 allows current to flow from source to drain when a negative voltage, Vgs, is applied to the gate terminal. When Vgs is increased beyond a certain threshold, the channel opens wider which consequently increases the drain-source current. The amount of current, as well as the voltage threshold of the device, is controlled by the gate voltage.
The SI4427BDY-T1-GE3 is primarily used in low voltage, low-rush and low-power applications where its low Rds(on) and fast switching speeds make it particularly suitable. It is used in a wide range of applications including power supplies, motor control, switching circuits, and data communications.
The SI4427BDY-T1-GE3 is flexible enough to be used in a variety of applications, but its specification remains constant. Both the input voltage range and types of applications that the device can be used in are fixed. Knowing this information, engineers can make an accurate selection of the right device for their application.
The specific data is subject to PDF, and the above content is for reference
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