NTK3139PT1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	480 mOhm @ 780mA, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 250µA
Vgs (Max):	±6V
Input Capacitance (Ciss) (Max) @ Vds:	170pF @ 16V
FET Feature:	--
Power Dissipation (Max):	310mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-723
Package / Case:	SOT-723

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Introduction To NTK3139PT1G

The NTK3139PT1G is a power transistor manufactured by Ricoh Corporation. It is a single-channel, N-channel insulated gate field effect transistor (IGFET), or simply known as an MOSFET (metal-oxide-semiconductor FET). This MOSFET features an solderable pack fitting in a TO-3PN (2.54 mm lead pitch) frame. The transistor is designed for high-frequency applications such as radio frequency systems, telecommunication equipment and industrial automation equipment.

Application Fields

NTK3139PT1G MOSFET mainly finds its applications in various RF communication systems, audio equipment, power supplies, and power amplifiers. Some of the detailed applications are mentioned below:

• Radio frequency amplifiers: Due to their ability to support wide range of frequencies, N-channel MOSFETs such as NTK3139PT1G are suitable for RF applications. They are used to build high frequency switching amplifier circuits and amplifying signals at high frequencies.
• Switch mode power supply: NTK3139PT1G transistors are highly efficient and hence they are used in switch-mode power supplies in which they are used to switch current/voltage levels. They are used as a switch and the switching frequency may be up to 100kHz.
• Audio amplifiers: The high power supply efficiency and switching speed of NTK3139PT1G makes them suitable for use in audio amplifiers. The wide range of frequencies they operate in makes them suitable for audio signal amplifications.

Working Principle

The PN junction theory forms the basis of working of any MOSFET. In NTK3139PT1G, when a voltage is applied to the drain and source terminals, an electric field is formed between them. This electric field causes the current to flow from drain to source. This causes an increase in the ionic concentration in the form of electrons on the N-channel region of the transistor. This causes positive charge to accumulate on the source terminal and negative charge on the drain terminal. The increase in the electric field between the drain and source causes a further thinning of the nonconducting layer between them. This further increases the current flow. The increase in the current flow ultimately causes voltage drop across the transistor and this is referred to as the MOSFET’s ‘on’ state.When there is no bias voltage at drain and source terminals, no electric field can be formed in the transistor and hence the current flow through it is also 0. This is referred to as the MOSFET’s ‘off’ state. A simple analogy of this is that of a water pipe and water flow. When the pipe is filled with water, current will flow through it. But when it is kept open, the water will eventually flow out and the current flow stops.

Conclusion

NTK3139PT1G is a single-channel, N-channel insulated gate field effect transistor (IGFET) manufactured by Ricoh Corporation. The transistor has wide range of applications in RF communication systems, audio equipment, power supplies and power amplifiers due to its high switching speed and power-supply efficiency. The PN junction theory forms the basis of working of this transistor. When a voltage is applied at the drain and source terminals, the current flow through the transistor increases. When there is no voltage, the transistor remains in an ‘off’ state.

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