AON7524 Discrete Semiconductor Products |
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Allicdata Part #: | 785-1634-2-ND |
Manufacturer Part#: |
AON7524 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 28A 8-DFN |
More Detail: | N-Channel 30V 25A (Ta), 28A (Tc) 3.1W (Ta), 32W (T... |
DataSheet: | AON7524 Datasheet/PDF |
Quantity: | 1000 |
Series: | AlphaMOS |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta), 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 2250pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 32W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (3x3) |
Package / Case: | 8-PowerSMD, Flat Leads |
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AON7524 Application Field and Working Principle
The AON7524 MOSFET is a depletion-mode insulated-gate field-effect transistor (IGFET) designed on an advanced dissipative p-channel process. It is used to control higher-current applications and offer improved protection in harsh environments, such as power supplies, lighting, industrial, and automotive systems. This MOSFET has high-voltage and low-power mobility, making it ideal for a variety of challenging applications.
This device is intended to be used in switching applications and can be operated as a normally-on device. When activated, it will cut off the path between the drain and source. The device has a breakdown voltage rating of 45V with a 25V drain voltage (VDSS). It also has a maximum operating temperature of 150°C.
The AON7524 is a three-terminal device that consists of a substrate, drain and source electrodes. These terminals are all connected to a p-channel semiconductor region, where most of the electronic activity will take place. For example, when a positive voltage is applied to the gate, this will create a positive electric field that will induce an electron current from the source to the drain. This will ultimately produce an output current (Id) from the drain.
The operating principle of the AON7524 involves biasing the gate electrode in order to modulate the flow of current between the drain and source. This modulation is done by varying the width of the conducting channel between the drain and source regions. When the gate voltage exceeds the gate threshold voltage (VGS (th)), electrons will then be repelled away from the surface of the semiconductor, and a conducting channel is formed between the drain and source. In this state, the AON7524 is said to be in the “on-state”. When the gate voltage is below the VGS (th), the conducting channel between the drain and source is no longer present and the device is said to be in the “off-state”.
This device can also be used as an analog switch in order to create two different states of operation. This can be achieved by employing two different gate voltages, with one for the on-state (VGS (on)) and one for the off-state (VGS (off)). This allows for precise control of the switch, allowing for more efficient switching operations.
The AON7524 is a great choice for controlling higher-current applications and providing reliable protection in harsh environments. It is designed on an advanced dissipative p-channel process and can be operated as a normally-on device. It also employs a biasing method known as analog-enhanced switching which allows for precise control of the switch and more efficient operations. All of these features make the AON7524 an ideal choice for many power applications.
The specific data is subject to PDF, and the above content is for reference
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