SI8406DB-T2-E1 Discrete Semiconductor Products |
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Allicdata Part #: | SI8406DB-T2-E1TR-ND |
Manufacturer Part#: |
SI8406DB-T2-E1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 16A MICROFOOT |
More Detail: | N-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surfac... |
DataSheet: | SI8406DB-T2-E1 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | 850mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 8V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 2.77W (Ta), 13W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-Micro Foot™ (1.5x1) |
Package / Case: | 6-UFBGA |
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The SI8406DB-T2-E1 is one of the most popular single MOSFETs, designed and manufactured by Vishay Intertechnology, Inc. This device is a single N-Channel MOSFET with a 30-V drain-source breakdown voltage, very sensitive gate threshold voltage and low reverse transfer capacitance. It is typically used for low power switching applications, where a gateway MOSFET is needed.
The device is optimized for maximum performance in power switching applications and is an ideal choice for high speed switching, such as motor control, DC to DC converter and motor drive applications. The SI8406DB-T2-E1 features an integrated 30 V drain-source breakdown voltage, very sensitive gate threshold voltage and low reverse transfer capacitance.
The working principle of the SI8406DB-T2-E1 is simple. When the gate voltage is applied, the MOSFET turns on and the drain current rises. When the gate voltage is removed, the MOSFET turns off and the drain current decreases. The voltage of the source and drain determine the resistance of the MOSFET. This can be used to control the current in an electronic circuit.
The SI8406DB-T2-E1 is suitable for various applications, including power switching and motor control applications. It is also suitable for use in DC to DC converters, motor drive applications and low power switching. This MOSFET can be used in DC motor control, voltage and current regulated power systems and even AC motor control systems.
The SI8406DB-T2-E1 is only able to handle a maximum drain-source voltage of 30V, and its thermal resistance can reach up to 152°C/W. It is also recommended for switching frequencies up to 1 MHz. This makes it perfect for low power switching applications.
In motor control applications, the SI8406DB-T2-E1 is able to handle a maximum drain-source voltage of 30V and its thermal resistance can reach up to 152°C/W. It is also suitable for use in DC motor control, voltage and current regulated power systems, and even AC motor control systems. The ability to handle high currents and operate at high switching frequencies allows the MOSFET to be used in many different types of applications.
The SI8406DB-T2-E1 is also suitable for use in DC to DC converters and can be used to provide a regulated voltage across its terminals even when the input voltage changes. It is also recommended for switching frequencies up to 1 MHz and can be used in a wide range of voltage and current applications.
The SI8406DB-T2-E1 is an ideal choice for low power switching applications and is available in various packages, ranging from MSOP to SOP packages. This allows the device to be used in various types of applications, including motor control, voltage and current regulated power systems, and even AC motor control systems. In addition, its high switching speed and low on-resistance allow it to be used in high power applications.
The specific data is subject to PDF, and the above content is for reference
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