FQD7P06TM Allicdata Electronics

FQD7P06TM Discrete Semiconductor Products

Allicdata Part #:

FQD7P06TMTR-ND

Manufacturer Part#:

FQD7P06TM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 60V 5.4A DPAK
More Detail: P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surfac...
DataSheet: FQD7P06TM datasheetFQD7P06TM Datasheet/PDF
Quantity: 7500
Stock 7500Can Ship Immediately
Specifications
Series: QFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 451 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
FET Feature: --
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQD7P06TM is a transistor widely used in electronics and electrical engineering. This device is a field-effect transistor (FET), specifically a metal oxide semiconductor field-effect transistor (MOSFET). This type of transistor is a type of unipolar transistor, meaning it only consists of one type of charge carriers. The FQD7P06TM is also what is known as a single MOSFET; this means it has only one transistor in it and the drain and source terminals are effectively connected together in the same package.

The FQD7P06TM has a number of uses and applications across a wide range of electronics and electrical engineering. This device is typically used as a voltage-controlled switch or amplifier. The device works by using the electrical field generated by a gate terminal to control the flow of current within the channel created between the source and drain terminals. By controlling the current within this channel, the device can be used to switch or amplify electrical signals without having to use additional components. This makes the FQD7P06TM a cost-effective, efficient and powerful choice when it comes to low-power applications.

The FQD7P06TM is also used in many applications requiring high-speed switching or amplifying. This is due to the fact that it has a very low input capacitance, which results in quicker switching times when compared to other transistors. Additionally, the device has a very low on-resistance, meaning it is highly efficient in terms of power utilisation. This device is also a great choice for applications which require very low noise performance, as the FQD7P06TM has very low levels of gate capacitance and drain-source capacitance.

In terms of design and implementation, the FQD7P06TM is relatively easy to use. The device has three terminals; gate, source and drain. The gate terminal is used to control the current within the channel between the source and drain, and the resistance of this channel is determined by the amount of voltage applied to the gate. The source terminal serves as the input and the drain terminal as the output, and when a voltage is applied to the gate, a current flows between the source and drain, allowing signals to be switched or amplified.

To summarize, the FQD7P06TM is a type of single metal oxide semiconductor field-effect transistor (MOSFET). It is a low-power, high-speed device that is used in many applications such as voltage-controlled switches or amplifiers. The FQD7P06TM has a low input capacitance and low on-resistance, and is highly power-efficient. With three terminals (gate, source and drain), the device is relatively easy to design and implement in many applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FQD7" Included word is 17
Part Number Manufacturer Price Quantity Description
FQD7N10TM ON Semicondu... -- 1000 MOSFET N-CH 100V 5.8A DPA...
FQD7P06TM_NB82050 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 60V 5.4A DPAK...
FQD7N20TM_F080 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 5.3A DPA...
FQD7P06TM_F080 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 60V 5.4A DPAK...
FQD7P20TM_F080 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 200V 5.7A DPA...
FQD7N10LTF ON Semicondu... -- 1000 MOSFET N-CH 100V 5.8A DPA...
FQD7N20LTF ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 5.5A DPA...
FQD7N20TF ON Semicondu... -- 1000 MOSFET N-CH 200V 5.3A DPA...
FQD7N20TM ON Semicondu... -- 1000 MOSFET N-CH 200V 5.3A DPA...
FQD7P06TF ON Semicondu... -- 1000 MOSFET P-CH 60V 5.4A DPAK...
FQD7N30TF ON Semicondu... 0.0 $ 1000 MOSFET N-CH 300V 5.5A DPA...
FQD7P20TF ON Semicondu... -- 1000 MOSFET P-CH 200V 5.7A DPA...
FQD7P06TM ON Semicondu... -- 7500 MOSFET P-CH 60V 5.4A DPAK...
FQD7N30TM ON Semicondu... -- 1000 MOSFET N-CH 300V 5.5A DPA...
FQD7N20LTM ON Semicondu... -- 1000 MOSFET N-CH 200V 5.5A DPA...
FQD7P20TM ON Semicondu... -- 10000 MOSFET P-CH 200V 5.7A DPA...
FQD7N10LTM ON Semicondu... -- 5000 MOSFET N-CH 100V 5.8A DPA...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics