FQD7P06TM Discrete Semiconductor Products |
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Allicdata Part #: | FQD7P06TMTR-ND |
Manufacturer Part#: |
FQD7P06TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 5.4A DPAK |
More Detail: | P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surfac... |
DataSheet: | FQD7P06TM Datasheet/PDF |
Quantity: | 7500 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 451 mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 295pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 28W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FQD7P06TM is a transistor widely used in electronics and electrical engineering. This device is a field-effect transistor (FET), specifically a metal oxide semiconductor field-effect transistor (MOSFET). This type of transistor is a type of unipolar transistor, meaning it only consists of one type of charge carriers. The FQD7P06TM is also what is known as a single MOSFET; this means it has only one transistor in it and the drain and source terminals are effectively connected together in the same package.
The FQD7P06TM has a number of uses and applications across a wide range of electronics and electrical engineering. This device is typically used as a voltage-controlled switch or amplifier. The device works by using the electrical field generated by a gate terminal to control the flow of current within the channel created between the source and drain terminals. By controlling the current within this channel, the device can be used to switch or amplify electrical signals without having to use additional components. This makes the FQD7P06TM a cost-effective, efficient and powerful choice when it comes to low-power applications.
The FQD7P06TM is also used in many applications requiring high-speed switching or amplifying. This is due to the fact that it has a very low input capacitance, which results in quicker switching times when compared to other transistors. Additionally, the device has a very low on-resistance, meaning it is highly efficient in terms of power utilisation. This device is also a great choice for applications which require very low noise performance, as the FQD7P06TM has very low levels of gate capacitance and drain-source capacitance.
In terms of design and implementation, the FQD7P06TM is relatively easy to use. The device has three terminals; gate, source and drain. The gate terminal is used to control the current within the channel between the source and drain, and the resistance of this channel is determined by the amount of voltage applied to the gate. The source terminal serves as the input and the drain terminal as the output, and when a voltage is applied to the gate, a current flows between the source and drain, allowing signals to be switched or amplified.
To summarize, the FQD7P06TM is a type of single metal oxide semiconductor field-effect transistor (MOSFET). It is a low-power, high-speed device that is used in many applications such as voltage-controlled switches or amplifiers. The FQD7P06TM has a low input capacitance and low on-resistance, and is highly power-efficient. With three terminals (gate, source and drain), the device is relatively easy to design and implement in many applications.
The specific data is subject to PDF, and the above content is for reference
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