SI4436DY-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4436DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4436DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 8A 8-SOIC |
More Detail: | N-Channel 60V 8A (Tc) 2.5W (Ta), 5W (Tc) Surface M... |
DataSheet: | SI4436DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The SI4436DY-T1-GE3 is a N-channel, enhancement mode field effect transistor (FET), powered by a 3.3V supply. The device has a built-in gate drive, making it ideal for automotive, computer, and consumer applications. This device is a key component for any system that needs an analog signal but also requires an efficient operation.
The functional principle of a field effect transistor is that, when an electric charge is induced in an insulated gate region, electric fields are created in the surrounding material. When the gate voltage rises above the threshold voltage, the field created affects the field in the channel, thereby controlling the current flow in the channel, and allowing the device to act as a switch or amplifier. The electric charge induced by the gate voltage is referred to as a gate current, and the electric field generated by this current is known as a gate field.
The SI4436DY-T1-GE3 offers an efficient gate drive, making it an ideal choice for use in a variety of applications. The device is suitable for applications such as audio power amplifiers, digital signal processors, and automotive audio systems. The device offers excellent HALT and ESD protection, with a drain breakdown voltage of 30V and a gate breakdown voltage of 10V. The device also offers an input capacitance of 1310pF, making it suitable for use in low noise, high speed applications.
The SI4436DY-T1-GE3 is designed for use in both commercial and automotive applications. The device is offered in a TO-220 package and offers a safe operating area of 200W. The device also offers excellent device isolation and compatibility with many other microelectronics systems. The device is also designed for applications where space-saving and minimal power consumption are important.
The SI4436DY-T1-GE3 is a key component in an efficient and low-noise system. The device’s built-in gate drive and compatibility with multiple microelectronics systems make it ideal for use in such applications. The device also offers excellent device isolation, making it a great choice for applications such as digital signal processors and audio power amplifiers. Additionally, the device is offered in a range of packages, making it suitable for use in many different applications.
The specific data is subject to PDF, and the above content is for reference
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