DTA143TKAT146 Discrete Semiconductor Products |
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Allicdata Part #: | DTA143TKAT146TR-ND |
Manufacturer Part#: |
DTA143TKAT146 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA143TKAT146 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.02193 |
6000 +: | $ 0.01978 |
15000 +: | $ 0.01720 |
30000 +: | $ 0.01548 |
75000 +: | $ 0.01376 |
150000 +: | $ 0.01147 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | DTA143 |
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A DTA143TKAT146 is a single pre-biased bipolar junction transistor (BJT). It is part of the DTA143 family, which has a range of transistor production for general-purpose signal, switching and amplifier operations.
A bipolar junction transistor, or BJT, consists of three terminals connected to a semiconductor material, usually silicon or germanium. It is formed from p-type and n-type materials connected together in the form of a sandwich. This effectively creates an electric field within the transistor. BJTs operate based on the principle of a current flowing between the emitter and collector terminals, which is then amplified between the base and collector.
The DTA143TKAT146 is a pnp transistor, with the emitter and collector terminals being p-type material, and the base being n-type. It has an integrated controlled current and constant current device for lower power consumption. This makes it suitable for use in low-power, low-noise circuits, such as RF amplifiers, switching and signal applications.
The DTA143TKAT146 has a high breakdown voltage at only 2.0V, meaning that it can operate at higher currents before it reaches a point where it will short-circuit. Its collector current rating is -2A, with a peak rating up to -200mA. Its gain is also very high, at hfe > 300, with hFE guaranteed at 625 at 10mA. It is also temperature stable, with a minimum of hFE = 500 at 110°C.
The DTA143TKAT146 is rated for a wide operating temperature range, from -50°C to +150°C. It has a low 0.5mA intrinsic stand-by current, and a very low 1V threshold at -0.2mA, meaning that it can be used in low power, low noise applications. It also has a high gain-bandwidth product of 0.6, meaning that it can accurately reproduce high frequencies, making it suitable for RF applications.
The DTA143TKAT146 is also robust and reliable, with a long operating life. It has ESD protection of 8kV for human body model and 4kV for machine model. It is also antistatic and static-free, making it suitable for use in sensitive circuits. It is also RoHS compliant.
In summary, the DTA143TKAT146 is a single pre-biased bipolar junction transistor, suitable for low-power, low-noise applications such as RF amplifiers, switching and signal applications. Its high breakdown voltage, robust construction and wide operating temperature range make it well-suited for use in a variety of applications. It is an excellent choice for low-power, low-noise circuits, and as it is ESD-protected, static-free and RoHS compliant, it is safe for use in sensitive circuits.
The specific data is subject to PDF, and the above content is for reference
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