DTA143TKAT146 Allicdata Electronics

DTA143TKAT146 Discrete Semiconductor Products

Allicdata Part #:

DTA143TKAT146TR-ND

Manufacturer Part#:

DTA143TKAT146

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 200MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA143TKAT146 datasheetDTA143TKAT146 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.02193
6000 +: $ 0.01978
15000 +: $ 0.01720
30000 +: $ 0.01548
75000 +: $ 0.01376
150000 +: $ 0.01147
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
Base Part Number: DTA143
Description

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A DTA143TKAT146 is a single pre-biased bipolar junction transistor (BJT). It is part of the DTA143 family, which has a range of transistor production for general-purpose signal, switching and amplifier operations.

A bipolar junction transistor, or BJT, consists of three terminals connected to a semiconductor material, usually silicon or germanium. It is formed from p-type and n-type materials connected together in the form of a sandwich. This effectively creates an electric field within the transistor. BJTs operate based on the principle of a current flowing between the emitter and collector terminals, which is then amplified between the base and collector.

The DTA143TKAT146 is a pnp transistor, with the emitter and collector terminals being p-type material, and the base being n-type. It has an integrated controlled current and constant current device for lower power consumption. This makes it suitable for use in low-power, low-noise circuits, such as RF amplifiers, switching and signal applications.

The DTA143TKAT146 has a high breakdown voltage at only 2.0V, meaning that it can operate at higher currents before it reaches a point where it will short-circuit. Its collector current rating is -2A, with a peak rating up to -200mA. Its gain is also very high, at hfe > 300, with hFE guaranteed at 625 at 10mA. It is also temperature stable, with a minimum of hFE = 500 at 110°C.

The DTA143TKAT146 is rated for a wide operating temperature range, from -50°C to +150°C. It has a low 0.5mA intrinsic stand-by current, and a very low 1V threshold at -0.2mA, meaning that it can be used in low power, low noise applications. It also has a high gain-bandwidth product of 0.6, meaning that it can accurately reproduce high frequencies, making it suitable for RF applications.

The DTA143TKAT146 is also robust and reliable, with a long operating life. It has ESD protection of 8kV for human body model and 4kV for machine model. It is also antistatic and static-free, making it suitable for use in sensitive circuits. It is also RoHS compliant.

In summary, the DTA143TKAT146 is a single pre-biased bipolar junction transistor, suitable for low-power, low-noise applications such as RF amplifiers, switching and signal applications. Its high breakdown voltage, robust construction and wide operating temperature range make it well-suited for use in a variety of applications. It is an excellent choice for low-power, low-noise circuits, and as it is ESD-protected, static-free and RoHS compliant, it is safe for use in sensitive circuits.

The specific data is subject to PDF, and the above content is for reference

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