SI9936BDY-T1-E3 Discrete Semiconductor Products |
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| Allicdata Part #: | SI9936BDY-T1-E3TR-ND |
| Manufacturer Part#: |
SI9936BDY-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET 2N-CH 30V 4.5A 8-SOIC |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 4.5A 1.1W Surf... |
| DataSheet: |  SI9936BDY-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A |
| Rds On (Max) @ Id, Vgs: | 35 mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Power - Max: | 1.1W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Base Part Number: | SI9936 |
Description
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The SI9936BDY-T1-E3 is an integrated circuit (IC) which incorporates several MOSFETs and transistors into a single device. It is designed for high power applications and is widely used in power supplies, motor controllers, and other industrial equipment. The SI9936BDY-T1-E3 also has wide-spread usage in audio amplifiers and motor controllers. This article will discuss the application fields and working principles of the SI9936BDY-T1-E3.The SI9936BDY-T1-E3 is an array of the Siliconix IKM9936BDY-T1-E3 MOSFETs. It incorporates three separate MOSFETs, each of which offers an operating temperature range of -55°C to +250°C. The SI9936BDY-T1-E3 is designed for applications such as general purpose switching, power supplies, motor controllers, and other industrial equipment. The MOSFETs incorporated in the SI9936BDY-T1-E3 have a wide range of features, including: low on-resistance, high gate-source breakdown voltage, and high current handling capability.The SI9936BDY-T1-E3 is capable of providing up to 3.0A at a voltage rating of up to 100V. The device also features a low gate-source charge (Qg) which makes it ideal for switching applications. The low Qgs results in faster switching times, improving overall efficiency. Additionally, the SI9936BDY-T1-E3 utilizes low input capacitance which lowers switching losses.The working principle of the SI9936BDY-T1-E3 is based on MOSFETs. A MOSFET is a type of transistor that relies on the movement of charge carriers in a semiconductor body. In a MOSFET, the gate electrode controls the flow of carriers from the source to the drain, thereby providing voltage-controlled current switching. The SI9936BDY-T1-E3 is a three-channel device. This means that each MOSFET has its own gate electrode and its own source and drain terminals.The SI9936BDY-T1-E3 is an ideal choice for applications that require a high level of current and voltage performance. The device features a low on-resistance, which minimizes power dissipation. The low input capacitance translates to faster switching times and improved efficiency. Additionally, the device is designed to operate over a wide temperature range.In conclusion, the SI9936BDY-T1-E3 is a highly integrated MOSFET array designed for high-power applications. It incorporates three separate MOSFETs with a wide range of features, including: low on-resistance, high gate-source breakdown voltage, and high current handling capability. The device is widely used in power supplies, motor controllers, and other industrial equipment, as well as for audio amplifiers and other applications. The SI9936BDY-T1-E3 utilizes the MOSFET working principle, which offers voltage-controlled current switching, fast switching, and improved efficiency.
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