PHN210,118 Allicdata Electronics
Allicdata Part #:

PHN210,118-ND

Manufacturer Part#:

PHN210,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET 2N-CH 30V 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 2W Surface Mo...
DataSheet: PHN210,118 datasheetPHN210,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
Power - Max: 2W
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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PHN210,118 Application Field and Working Principle

PHN210,118 is a field effect transistor (FET) which is integrated in an array structure. It is also known as a dual FET array due to its two individual FETs integrated into a single package. The device is designed to perform complex two-transistor decisions such as OR/AND logic operations. This device is suitable for applications such as programs, logic gates, and switching applications.

The PHN210,118 is composed of two identical FETs, an N channel and a P channel. Each device has an independent gate which is situated between two source terminals and the drain terminal. The gate voltage determines the electrical properties and therefore the actions of the N and P channel FETs. The properties control the drain current that is allowed to pass from source to drain.

The application field of this device is suitable for small voltage source applications such as integrated circuits, small signal controllers, microprocessors and digital systems. Its features make it a cost-effective and space-saving choice for circuits that require multiple FETs in one package. This device has high input impedance, which makes it suitable for logic and sequential operation.

The working principle of PHN210,118 is the same as other dual FET arrays; its two FETs perform complex logic operations in two terminal devices. It utilizes two transistors arranged in a flip-flop configuration to control the current that flows between the source and drain terminals. The current will flow when the gate voltage is greater than a predetermined value, known as the threshold voltage.

The transistors of the device can be used in various ways, depending on the application. They can be used for AND/OR logic operations, sequential logic, presetting and latching. The latching of the device also prevents accidental triggering of the device due to external conditions. The device also boasts high power efficiency and low power consumption, making it ideal for applications in which power usage needs to be minimized.

In conclusion, PHN210,118 is a dual FET array which is composed of two individual FETs in one package. It is suitable for small voltage applications and is able to perform complex two-transistor decisions such as OR/AND logic operations. The device has high input impedance and low power consumption, making it ideal for use in logic and sequential operations.

The specific data is subject to PDF, and the above content is for reference

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