SI4413ADY-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4413ADY-T1-E3TR-ND |
Manufacturer Part#: |
SI4413ADY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 10.5A 8-SOIC |
More Detail: | P-Channel 30V 10.5A (Ta) 1.5W (Ta) Surface Mount 8... |
DataSheet: | SI4413ADY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 5V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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SI4413ADY-T1-E3 is a high voltage N-channel enhancement mode field-effect transistor (FET) designed for medium to high current switching applications. It is specifically designed to minimize on-state resistance and reduce power losses during conduction. This transistor can be used for switching applications, audio applications, and many other automotive and consumer applications.
SI4413ADY-T1-E3 has a wide variety of application fields. It can be used in power management, load switching, interfacing and level shifting, audio switching, and many other consumer electronics applications. The transistor can also be used in automotive circuits, including power driving, audio and video switching, and other consumer and industrial applications.
SI4413ADY-T1-E3 is an N-channel enhancement mode field-effect transistor. It features a molded lead-frame, low on-state resistance, fast switching performance, and high voltage tolerance. The transistor operates with high input impedance and low gate capacitance. It also has excellent switching performance and low gate turn-on and turn-off delay.
The operation of the SI4413ADY-T1-E3 can be explained in terms of the gate, source and drain terminals. The gate of the transistor acts as an input to the device and acts as an access control point for the electrical current. When an electric signal is applied to the gate, the electrical current flows from the drain to the source of the device. When the gate is not being driven, the current is blocked from flowing between the source and drain terminals.
The drain and the source terminals of the SI4413ADY-T1-E3 are connected to the power supply. When the gate signal is applied, the drain is driven to a higher voltage than the source and the current is allowed to flow between the drain and the source. The on-state resistance of the transistor is typically very low and it provides a good path for the current flow in the device.
The SI4413ADY-T1-E3 is an excellent device for medium to high current switching applications. It features a low on-state resistance, fast switching performance, and high voltage tolerance. This device can be used in a variety of applications such as power management, load switching, interfacing, level shifting, audio switching, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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