BC847AW,135

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The BC847AW,135 is a general purpose, low noise, low gain PNP transistor manufactured by NXP semiconductors. This single transistor is typically used in preamplification and input stages, oscillators, frequency multipliers and phase locked loop circuits, amongst other applications. It is also designed for switching applications.

The transistor consists of three main components: a base, collector, and emitter. While it is a bipolar junction transistor, it only uses one PNP (positron-emitter-transistor). This makes it useful for a wide range of applications, such as in low-noise amplifier circuits where noise reduction is required, and in low-gain preamplification and switching applications.

The working principle of the BC847AW,135 is based on the “Hemsworth-Timcke” effect. This effect is where a change in the voltage at the base affects the current at the collector, which in turn affects the voltage at the emitter. The voltage between the collector and the emitter determines the current gain of the transistor, which is known as the “beta” value. The beta value for the BC847AW,135 is approximately 130.

The BC847AW,135 can be used in a wide range of applications, including: RF oscillators, frequency multipliers, analog preamplifiers, switching, amplifiers, and motor driver circuits. The transistor is especially useful for RF applications where noise levels need to be minimized and high gain is not necessary.

The BC847AW,135 is designed for low noise applications, and the transistor has a minimum dc current gain of 130 at a collector current of 10mA. The Transistor can operate up to a continuous collector current of 400mA. The typical AC current gain is 90, which is relatively low compared to other transistors. The power dissipation capability of the transistor is 625mW at 25°C.

The BC847AW,135 is a widely used transistor, and has seen applications in many electronic circuits. It is an ideal choice for low noise, low current gain applications, such as RF oscillators and preamplifier circuits.

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