FJN4309RTA Discrete Semiconductor Products

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The FJN4309RTA bipolar junction transistor (BJT) is an optically isolated, integrated, single-mode pre-biased NPN BJT. The FJN4309RTA is ideal for applications that require isolation, high performance, and low on-resistance. It is widely used in high-voltage, high-current switching applications such as motor control and power control circuits. This device is also used in automotive, industrial, and telecommunications applications.

The FJN4309RTA is composed of an optically isolated NPN transistor, which is pre-biased with a differential amplifier, a zener diode, and a gate resistor. The gate resistor and zener diode assure the circuit to remain in steady state, even when the load current is varying. The differential amplifier ensures the base-emitter voltage is always within the pre-defined range, regulating the transistor\'s collector current to the desired value. This allows the current to remain within the defined load current range, even under varying environmental conditions.

As for the performance of the FJN4309RTA, it has a wide operating temperature range from –40 to 85°C, and the on-resistance to be approximately 0.95 mΩ (maximum). It also has a breakover voltage of 7 V, and a maximum continuous forward current of 8 A. Furthermore, the FJN4309RTA has very low leakage current, of 1 nA (maximum), and a high safety voltage of 25 V.

The FJN4309RTA is one of the most advanced single-mode pre-biased NPN BJTs available in the market today. It is very versatile, and can be used in a wide range of applications. It has a wide operating temperature range, high performance and low on-resistance, which make it ideal for high-voltage, high-current switching applications such as motor control, power control and automotive, industrial, and telecommunications applications.

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