Allicdata Part #: | FDPF51N25YDTU-ND |
Manufacturer Part#: |
FDPF51N25YDTU |
Price: | $ 3.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 51A TO-220F |
More Detail: | N-Channel 250V 51A (Tc) 38W (Tc) Through Hole TO-2... |
DataSheet: | FDPF51N25YDTU Datasheet/PDF |
Quantity: | 763 |
1 +: | $ 2.77830 |
10 +: | $ 2.48094 |
100 +: | $ 2.03446 |
800 +: | $ 1.48863 |
1600 +: | $ 1.38939 |
Series: | UniFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 51A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 25.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3410pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 38W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F-3 (Y-Forming) |
Package / Case: | TO-220-3 Full Pack, Formed Leads |
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The FDPF51N25YDTU is a type of Field Effect Transistor (FET). It is a single-channel, Enhanced Low Voltage MOSFET. FETs are typically used as amplifying or switching devices in high voltage and power applications. The FDPF51N25YDTU has a drain-source voltage rating of 25V and an on-state drain current rating of 300mA. Furthermore, it has an "enhanced" low voltage rating of 4.5V, making it suitable for many low voltage applications.
The FDPF51N25YDTU can be easily integrated into a wide variety of applications because of its small size and low power consumption. It is widely used in consumer electronics, such as mobile phones and laptops, as well as industrial controls, communication systems, and automotive power electronics.
The working principle of FDPF51N25YDTU is based on the concept of a conductive channel between the drain and source terminals. A voltage is applied to the gate terminal to induce a current across the channel. As the voltage applied to the gate terminal increases, the current in the channel increases, resulting in an increase in the drain-source voltage (VDS). As the voltage reaches a certain threshold, the current in the channel becomes saturated. At this point, the device is said to be in its "on" state.
To switch the device off, the gate terminal must be disconnected from the source, leaving the gate floating. This removes the bias current from the channel, effectively cutting off the current flow. The device is then said to be in its "off" state.
The FDPF51N25YDTU is a versatile device that can be used to amplify signals or provide switching in various applications. It has a wide range of features that make it suitable for a variety of applications. For example, its low voltage rating makes it ideal for low voltage applications, while its high current ratings make it suitable for high power applications.
In addition, its relatively small size and low power consumption make it cost-effective and easy to integrate into a variety of systems. Furthermore, its ESD protection and wide safety margin make it suitable for applications that require high levels of reliability and protection.
The FDPF51N25YDTU is a single-channel MOSFET designed to operate at low voltages and currents. It is ideal for low power applications and has a wide range of features that make it suitable for a variety of applications. It is typically used as amplifying or switching devices in high voltage and power applications.
The specific data is subject to PDF, and the above content is for reference
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