DTA114TMT2L Discrete Semiconductor Products |
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Allicdata Part #: | DTA114TMT2LTR-ND |
Manufacturer Part#: |
DTA114TMT2L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 150MW VMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA114TMT2L Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VMT3 |
Base Part Number: | DTA114 |
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The DTA114TMT2L is an advanced single, pre-biased bipolar junction transistor (BJT). It is designed primarily for use in various switching and signal processing applications. Its pre-biased structure and wide bandgap provides excellent performance and reliability in high temperature and high frequency environments.
Application Field
The DTA114TMT2L is primarily used in switching and signal processing applications such as switch-mode power supplies, timers, phase-locked loops and communication circuits. It has a high current gain and low current gain cut-off frequency, which makes it an ideal choice for high speed applications. Additionally, its wide bandgap provides exceptional temperature stability and reliability in a variety of applications.
The DTA114TMT2L is also ensuring low power operation and low power dissipation, as it is specifically designed for low voltage and low current applications. Its high current gain and low current gain cut-off frequency makes it suitable for power MOSFET and IGBT switching applications, as well as high frequency avalanche-proof digital logic applications. Additionally, its small package size and low thermal resistance make it suitable for use in portable and high-density circuit boards.
Working Principle
The DTA114TMT2L is an NPN Bipolar Junction Transistor (BJT), which uses a pre-biased structure to achieve improved performance and high temperature operation in high frequency applications. It consists of three p-n junction layers that form a continuous structure. The three layers are the collector region (the most positive region), the base region (the middle-most region), and the emitter region (the most negative region). Current flows through the transistor when the base region is forward biased, allowing current to flow from the emitter to the collector. The transistor is off when the base region is reversed biased.
The DTA114TMT2L has a wide bandgap, which provides excellent temperature stability and reliability. Additionally, its built in temperature compensation and low current gain cut-off frequency ensures excellent performance in high temperature and high frequency applications. In power switching applications, the DTA114TMT2L has low conduction losses, ensuring low power operation and low power dissipation.
The DTA114TMT2L is an excellent choice for switching and signal processing applications. Its wide bandgap, high current gain and low current gain cut-off frequency provide excellent performance and reliability in high temperature and high frequency environments. Its low conduction losses, combined with its small package size and low thermal resistance, make it suitable for use in portable and high-density circuit boards.
The specific data is subject to PDF, and the above content is for reference
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