IRFS4310TRLPBF Discrete Semiconductor Products

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IRFS4310TRLPBF is a fast recovery hexfet power MOSFET produced by International Rectifier and manufactured using advanced semiconductor process technology. This power MOSFET features dynamic dV/dt rating, fast switching time, and improved gate charge/reverse recovery capabilities. It also has a very low on-resistance and requires very low gate drive power. These features, combined with the International Rectifier’s advanced circuit design and low RDS(on), make the IRFS4310TRLPBF one of the most versatile and useful power MOSFETs on the market today.

Application Field

The IRFS4310TRLPBF power MOSFET can be used for a variety of applications. It is suitable for use in high frequency DC-DC converters, hard disk drive applications, UPS systems, digital telecommunications, power systems and other high-efficiency power systems.

The fast switching time, high frequency capabilities, and low RDS(on) make the IRFS4310TRLPBF an ideal choice for high frequency, high power applications. The device is also suitable for use in power circuits that require high performance with minimal external components. The low gate charge and fast switching times make the device ideal for high frequency, PWM, boost and buck applications.

The IRFS4310TRLPBF is also ideal for audio amplifiers and power management applications. The device’s low RDS(on) and low on-state impedance ensure low switching losses and low impedance paths. The device is also suitable for use in high power AC/DC power control circuits, motor drives, and load control circuits.

Working Principle

The IRFS4310TRLPBF is a fast recovery hexfet power MOSFET. It has an advanced circuit design that uses fast-recovery cascodes to increase efficiency and reduce the charge time and Qqq. The device utilizes a multi-layer gate oxide and a low-threshold voltage to reduce stress on the Gate Oxide and strengthen the MOSFET’s switching characteristics.

The device is capable of delivering up to 80 A peak and has an RDS(on) of 0.022 Ω. The device is faster than most other power MOSFETs and can operate at frequencies up to 500kHz. The IRFS4310TRLPBF also features fast switching times and improved gate charge/reverse recovery capabilities. This ensures fast recovery times and helps reduce device heating.

The advanced circuit design of the IRFS4310TRLPBF also includes avalanche diode clamps, gate charge compensation and overvoltage protection. These features help to protect the device against overvoltage conditions and also ensure safe operation in high power, high frequency applications.

The IRFS4310TRLPBF also features a thermal shutdown circuit that helps reduce current temperature during high power operation. This helps to improve reliability and increase lifetime of the device.

The IRFS4310TRLPBF is suitable for a wide range of applications that require high performance and fast switching times. The device’s low on-resistance, fast switching time, and low RDS(on) make it an ideal choice for high power and high frequency applications.

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