FDPF55N06

Series:	UniFET™
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	22 mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	37nC @ 10V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	1510pF @ 25V
FET Feature:	--
Power Dissipation (Max):	48W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack

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IntroductionThe FDPF55N06 is a power MOSFET (metal-oxide-semiconductor field-effect transistor). It is one of the most commonly used components in current switching applications. This component is widely used in automotive, home automation and industrial applications.ApplicationsThe FDPF55N06 device is designed primarily for general purpose power and load switch applications. It can provide up to 37A continuous drain current and 100V source voltage. This component is used in a wide range of applications such as power supplies, motor control circuits, motor drives, digital logic circuits, switching systems, instrumentation, consumer electronics and factory automation systems.This component is also used in applications such as industrial motor control, LCD/LED backlighting, consumer electronics, automotive, telecom/datacom and consumer appliances.Working PrincipleFDPF55N06 is a field effect transistor (FET) and works on the principle of the metal-oxide-semiconductor field-effect. It is a voltage controlled device, meaning that the operating state (on or off) of the device is determined by a voltage applied to the gate terminal. When the gate of the FDPF55N06 is connected to a positive voltage, it turns on and a conducting channel is established between the source and the drain. The channel leads to current flow from the drain to the source. Conversely, when the gate of the device is connected to zero or negative voltage, the device shuts off and the drain-source channel is blocked.In order to maximize the devices switching performance, it is important to ensure that the drain-source voltage (VDS) and the gate-source voltage (VGS) are within the specified range. When operating in the linear region, the drain current is at its peak value and the device operates in saturation.ConclusionThe FDPF55N06 is a popular power MOSFET which is widely used in a variety of applications such as consumer electronics, automotive, industrial motor control, LCD/LED backlighting, consumer appliances and telecom/datacom etc. The device works on the principle of metal-oxide-semiconductor field-effect and is a voltage controlled device. It can provide up to 37A continuous drain current and 100V source voltage. In order to ensure its optimized performance, it is important to keep a check on the drain-source voltage (VDS) and gate-source voltage (VGS).

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