Allicdata Part #: | FDPF12N50T-ND |
Manufacturer Part#: |
FDPF12N50T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 11.5A TO-220F |
More Detail: | N-Channel 500V 11.5A (Tc) 42W (Tc) Through Hole TO... |
DataSheet: | FDPF12N50T Datasheet/PDF |
Quantity: | 887 |
Series: | UniFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1315pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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FDPF12N50T is a type of MOSFET that belongs to the family of single transistors. It is a transistor that has few pins or connections and is used mainly as an amplifier, switching device or as an adjustable voltage regulator. The FDPF12N50T has a wide variety of different uses, and its application field has grown over the years.
The FDPF12N50T is a lateral MOSFET with a structure that is self-aligned, so it is much smaller than a vertical type. This allows it to be used in many more applications than its vertical counterpart. The FDPF12N50T has a voltage range of 200V, a maximum current handling capability of 12A, and an ON-resistance as low as 0.015Ω. It also has great switching speeds of up to 400v/nS, which makes it an ideal choice for many high-performance applications.
The FDPF12N50T is mainly used for power management, motor control, mobile applications, and high-frequency switching. Its ability to control power at high speeds makes it a great choice for motor control applications, and its high current handling capabilities make it an ideal choice for applications that require a large amount of power. Its small size and low resistance make it ideal for mobile applications and for high frequency switching.
The working principle of the FDPF12N50T is based on the MOSFETs electrical conduction principles. It consists of two arrays of metal oxide semiconductor (MOSFET) transistors which act as a switch and can be operated with a gate voltage. When a voltage is applied to the gate, it will attract charge carriers (electrons), which then move between the source and drain, thus forming a current path.
The source is connected to the drain via a metal-oxide-semiconductor field-effect transistor (MOSFET). The FDPF12N50T uses this structure to create a high current carrying path, which is then controlled with a voltage on the gate. The gate voltage controls the amount of charge carriers that are passing through the MOSFET and thus determines the current flow.
The FDPF12N50T also has a built-in protection against short circuit and thermal damages due to its built-in temperature sensing and thermal protection. This protection mechanism ensures that the FDPF12N50T is able to work safely even in extreme environmental conditions.
In conclusion, the FDPF12N50T is a type of single transistor with a wide range of applications in various fields. It features a low resistance, high power handling capability, and fast switching speeds which make it ideal for a variety of applications. Its built-in protection mechanisms against thermal damage and short-circuits as well as its small size and self-aligning structure make it a great choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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