IXTH02N250 Allicdata Electronics
Allicdata Part #:

IXTH02N250-ND

Manufacturer Part#:

IXTH02N250

Price: $ 9.82
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 2500V 0.2A TO247
More Detail: N-Channel 2500V 200mA (Tc) 83W (Tc) Through Hole T...
DataSheet: IXTH02N250 datasheetIXTH02N250 Datasheet/PDF
Quantity: 136
1 +: $ 8.92710
30 +: $ 7.50582
120 +: $ 6.89724
510 +: $ 5.88294
Stock 136Can Ship Immediately
$ 9.82
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2500V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 450 Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 116pF @ 25V
FET Feature: --
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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The IXTH02N250 is a type of high-speed Vertical MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a single transistor device with low On-resistance, fast switching speed, and low gate drive power. This makes it ideal for applications such as switching power converters, motor control, and high-speed switching.

IXTH02N250 Application Field

The IXTH02N250 is specifically applicable to high-frequency power supplies, high-speed motor drives, low-frequency power supplies, and LEDs. It is capable of extremely fast switching speeds and low drive power. This makes it especially efficient in these applications. The IXTH02N250 has an exceptionally low on-resistance, making it an excellent choice for applications such as high-frequency power supplies and power converters that need to supply high amounts of power.

IXTH02N250 Working Principle

The IXTH02N250 is a vertical MOSFET which operates by using the channel conductivity in the P-type material to switch on and off current flow. It consists of an insulation layer, a second gate from the source, and an N-type channel. When a positive voltage is applied to the gate, the electric field causes a depletion of the channel to reduce its resistance. This allows current to flow through the transistor and power a load.

When the positive gate voltage is removed, the electric field no longer affects the channel, reducing its resistance. This deactivates the transistor and stops the current flow. By controlling the gate voltage, the current flow through the transistor can be controlled.

Conclusion

The IXTH02N250 is a high-speed Vertical MOSFET with superior power efficiency and fast switching speeds. It is ideal for applications such as switching power converters, motor control, and high-speed switching. It has an extremely low on-resistance, making it perfect for applications that require high current outputs or high-frequency power supplies. Thanks to its reliable, efficient performance, the IXTH02N250 is a popular choice in many industrial and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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