IXTH40N30 Allicdata Electronics
Allicdata Part #:

IXTH40N30-ND

Manufacturer Part#:

IXTH40N30

Price: $ 9.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 40A TO-247AD
More Detail: N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXTH40N30 datasheetIXTH40N30 Datasheet/PDF
Quantity: 26
1 +: $ 8.17740
30 +: $ 6.87582
120 +: $ 6.31840
510 +: $ 5.38919
Stock 26Can Ship Immediately
$ 9
Specifications
Series: MegaMOS™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
FET Feature: --
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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The IXTH40N30 is an advanced logic N-channel field effect transistor (FET) device specifically designed for switching, power supply control and regulator circuits. A FET is a type of transistor that uses electrical field to control current or voltage flow. This FET features a low drain saturation voltage, high input impedance and very low on-state resistance, allowing for efficient power delivery and superior performance when compared to other switching transistors.

The IXTH40N30 is a single N-channel FET, meaning it is able to control the flow of current from an N-type material to an external load without the need for a separate P-type material. This FET is a vertically-diffused MOSFET, meaning it is manufactured using a vertical diffusion process that creates an insulated gate and a heavily-doped drain and source region.

This FET is designed to operate in a variety of different application fields, including low-frequency switching, power supply control, and lighting systems. It can be used in both digital and analog circuits, and is especially well-suited for powering small loads such as those found in consumer devices, computers, and automotive applications.

The IXTH40N30 has a working principle that involves the transfer of electrons between the source, drain and gate electrodes. When a small voltage is applied to the gate terminal, this creates a field effect in the N-type material, allowing more electrons to flow from the source to the drain. The more electrons that flow, the higher the voltage drop across the gate-drain junction, and the more current that flows through the circuit. This process is known as “channel conductance” and is what allows the IXTH40N30 to regulate current flow and control power supply.

The IXTH40N30 can also be used in a variety of different power supply topologies, including linear regulators, DC to DC converters, and switching regulators. The FET can be used to keep the power supply within a specified range, providing a stable voltage and current to the load. The device is also integrated with thermal and overload protection, making it a safe and reliable solution for applications where power supply control is critical.

The IXTH40N30 is a unique field effect transistor device that offers superior performance and power control features for a variety of applications. The device\'s low drain saturation voltage, high input impedance and very low on-state resistance make it an ideal choice for use in switching, power supply control and lighting systems. Its working principle is based on channel conductance, allowing the device to efficiently regulate current flow and provide stable power to its load.

The specific data is subject to PDF, and the above content is for reference

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