Allicdata Part #: | IXTH75N10-ND |
Manufacturer Part#: |
IXTH75N10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 75A TO247AD |
More Detail: | N-Channel 100V 75A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | IXTH75N10 Datasheet/PDF |
Quantity: | 43 |
Specifications
Series: | MegaMOS™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 37.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 (IXTH) |
Package / Case: | TO-247-3 |
Description
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IXTH75N10 Application Field and Working Principle
Transistors, FETs and MOSFETs are widely used in today\'s electronics devices. They are used in a variety of ways to control and regulate the flow of current, voltage and power in a circuit. Among those, the IXTH75N10 belongs to the family of single MOSFETs. MOSFETs are metal-oxide semiconductor field effect transistors (MOSFETs) and are widely used in amplifying and switching circuits. As compared to other types of transistors, MOSFETs are able to handle larger currents and voltages and they are also very efficient in terms of power consumption. The IXTH75N10 is an enhancement type of MOSFET and is used in switching and amplifying applications. The IXTH75N10 has a breakdown voltage rating of 75V, a drain-source saturation voltage of 1V and a gate to source threshold voltage of 2V. The IXTH75N10 is a 3-pin device with a drain in the middle, gate on the right and source on the left. The working principle of the IXTH75N10 is based on the MOSFET operation. When a MOSFET is used in an amplifying application, a gate voltage will be applied to control the source-drain channel. When the gate voltage is increased, the width of the source-drain channel will also be increased, leading to higher current flows and thus amplifying the signal. In switching applications, the IXTH75N10 can be used to control high-voltage load switching and can be used as a power transistor. When the gate voltage is applied to the IXTH75N10, it will switch on the source-drain channel, leading to a high-current flow. In contrast, when the gate voltage is removed, the IXTH75N10 will switch off the source-drain channel, preventing the current from flowing. The IXTH75N10 is suited for a wide range of applications. It can be used for automotive audio amplifiers, FET-input op-amps, motor/actuator control circuits and power switching applications. The IXTH75N10 also has a low on-state resistance, meaning that it has very low conduction losses due to its efficient operation. In conclusion, the IXTH75N10 is a high-performance enhancement type single MOSFET that is suitable for amplifying, switching and driving applications. It is able to handle large currents and voltages and is also very efficient in terms of power consumption. It is thus suited for a wide range of applications in automotive audio amplifiers, FET-input op-amps, motor/actuator control circuits and power switching applications.The specific data is subject to PDF, and the above content is for reference
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