Allicdata Part #: | FDPF5N50FT-ND |
Manufacturer Part#: |
FDPF5N50FT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 4.5A TO-220F |
More Detail: | N-Channel 500V 4.5A (Tc) 28W (Tc) Through Hole TO-... |
DataSheet: | FDPF5N50FT Datasheet/PDF |
Quantity: | 833 |
Series: | UniFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.55 Ohm @ 2.25A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 28W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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FDPF5N50FT is a single N-channel MOSFET which is built and designed for use in applications like switch-mode power supplies, and fast switching. This device can be used in mass production, and is a cost-effective solution for power system design. In this article, we will discuss the application field and working principle of FDPF5N50FT.
FDPF5N50FT Application Field
FDPF5N50FT is especially effective in power systems, where high-power efficiency is needed. This MOSFET is suitable for AC or DC switching applications, and is designed to be used in applications such as high voltage DC-DC converters, Brushless DC motor drives, and low current switching applications. It also has very low Rds(on) resulting in minimal power losses which in turn keeps the device\'s operating temperature low during operation.
FDPF5N50FT can also be used for audio applications such as switching power amplifiers, mobile phones, and car stereos. Its low on-resistance per unit area allows for higher power densities, making it suitable for use in audio switching devices such as speakers and headphones. FDPF5N50FT has high frequency capability for fast switching applications which make it perfect for audio switching.
FDPF5N50FT Working Principle
FDPF5N50FT utilizes the principle of MOSFETs, which refers to metal oxide semiconductor field effect transistors. This type of transistor is constructed using an oxide semiconductor layer which sits between the source and drain terminals of the device. This layer acts like a gate which is used to control the flow of current through the device.
The gate of the FDPF5N50FT is connected to a voltage source which applies an electric field to the gate. When the voltage applied to the gate is above a certain threshold, it will create an electric field which will attract electrons from the source to the drain. This movement of electrons between the source and the drain creates an inversion layer which increases the conduction path and places the MOSFET in the On state. By varying the voltage applied to the gate, the inversion layer can be made to increase or decrease, creating a variable resistance between the source and drain. This variable resistance allows for the control of the current flowing through the device.
In conclusion, FDPF5N50FT is a single N-channel MOSFET which is used for a variety of applications in power systems, audio, and other fast switching devices. Its low resistance per unit area allows for higher power densities, making it suitable for use in audio switching devices, high voltage DC-DC converters, and Brushless DC motor drives. It employs the principle of MOSFETs which uses an oxide semiconductor layer between the source and drain terminals of the device and utilizes an electric field to control the flow of current through the device.
The specific data is subject to PDF, and the above content is for reference
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