FQD7N20LTM Discrete Semiconductor Products

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The FQD7N20LTM is a type of high-performance power MOSFET technology with a unique single-channel structure. This device has been designed to deliver exceptional performance in a variety of applications. It’s extremely low on-resistance and very low gate charge makes it ideal for high-efficiency and low-loss solutions. The FQD7N20LTM also has a very wide operating range, allowing it to be used in a variety of applications ranging from digital switching to analog circuits.

The FQD7N20LTM is composed of a single N-channel MOSFET with a built-in gate driver. It is housed in an 8-Lead TO-220 package and is capable of offering both linear and switching performance. This device is designed for low-loss switching and power protection solutions, making it the ideal choice for many applications. The built-in gate driver provides excellent stability and low-impedance circuit switching. The wide operating range also makes it suitable for applications involving high-voltage and high-power solutions.

Application Field

The FQD7N20LTM is designed to deliver outstanding performance in many applications, including automotive, industrial, and home appliances. Its low on-resistance and wide operating range make it ideal for use in high-efficiency switching and power protection solutions. Additionally, its small size makes it an ideal choice for space-constrained designs. The FQD7N20LTM can be used in power supplies, battery management systems, DC-DC converters, motor drivers, and other applications requiring high efficiency and low losses.

Working Principle

The FQD7N20LTM utilizes a unique single-channel structure to deliver exceptional performance. When a positive voltage is applied to the gate terminal, the device is turned on. This creates a drain-to-source current path from the drain terminal to the source terminal. The FQD7N20LTM leverages the MOSFET\'s low on-resistance to deliver high-efficiency switching. Additionally, its low gate charge helps limit the losses incurred during high-frequency switching operations.

To ensure excellent voltage regulation, the FQD7N20LTM also features a built-in anti-latency feature. This feature limits gate ringing, which can cause voltage droop. The FQD7N20LTM also has a very low gate charge and is capable of quick switching operations, making it ideal for high-efficiency power supplies.

The FQD7N20LTM is designed for reliable power protection solutions, and its wide operating range makes it suitable for a variety of applications. It is capable of switching up to 20A and can operate in an operating temperature range from -55 to 150°C. Additionally, its robust design helps ensure that it is capable of providing reliable operation in harsh environments.

The FQD7N20LTM is a high-performance, low-loss MOSFET technology that is designed to improve the efficiency of a variety of applications. Its wide operating range, low losses and low gate charge combine to make it the perfect choice for high-efficiency power supplies, DC-DC converters and battery management systems.

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