Allicdata Part #: | KSA1625KTA-ND |
Manufacturer Part#: |
KSA1625KTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 400V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 400V 500mA 10MHz 750m... |
DataSheet: | KSA1625KTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 5V |
Power - Max: | 750mW |
Frequency - Transition: | 10MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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KSA1625KTA is a type of bipolar junction transistor (BJT). This type of transistor is mainly used as an amplifier or a switch for low voltage signal control applications. As with other BJT transistors, the KSA1625KTA consists of three layers of doped semiconductor material: the emitter, base and collector.
The base of the KSA1625KTA contains a small area of very lightly doped semiconductor material which form a shallow, thin layer of charge. This thin layer of charge allows current to be injected from the emitter region by biasing the base with a voltage from a small external current source. The large current in the collector region is given by the trimmer resistor connected in the collector-emitter loop.
When a voltage is applied to the base of the KSA1625KTA, electrons are injected into the base by the emitter junction. These electrons form a thin charge layer of electrons at the base-collector boundary. This thin layer of electrons lowers the potential barrier at the base-collector junction and allows the collector current to flow. The current of an operating KSA1625KTA transistor is proportional to the current at its base. This current is referred to as the gain of the transistor.
In abridged form, the working principles of the KSA1625KTA can be presented in the following points:
- The drain current of the transistor is controlled by the voltage at its base.
- The trimmer resistor connected to the collector-emitter loop limits the collector current.
- The current gain of the transistor is the ratio of the current flowing through the collector, relative to the current at its base.
- By changing the trimmer resistor, the gain of the transistor can be adjusted to suit the particular application.
The KSA1625KTA transistor can be used in a variety of applications where low voltage signal control is required. It is commonly used in instrumentation amplifiers, Class B amplifiers, switching circuits, voltage-controlled oscillators, and other low voltage radio frequency applications. It is also used in low power applications such as audio and video amplifiers, active filters, and logic circuits.
The KSA1625KTA is a reliable, low power transistor with a wide range of applications. Its low voltage and current requirements make it an ideal choice for low-power, audio, and video applications. For more information about this device and its application, you can refer to the datasheet provided by its manufacturer.
The specific data is subject to PDF, and the above content is for reference
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