Allicdata Part #: | KSA1381ES-ND |
Manufacturer Part#: |
KSA1381ES |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 300V 0.1A TO-126 |
More Detail: | Bipolar (BJT) Transistor PNP 300V 100mA 150MHz 7W ... |
DataSheet: | KSA1381ES Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 10V |
Power - Max: | 7W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126-3 |
Base Part Number: | KSA1381 |
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The KSA1381ES is a type of single bipolar junction transistor (BJT) that is commonly used in consumer electronic devices. It is a general-purpose NPN transistors made using the latest advanced semiconductor technologies and processes, providing excellent switching performance and very low noise. This transistor can be used in a wide range of analog and digital electronics applications including amplifiers, analog switches, logic circuits, power switching, motor control and more.
The KSA1381ES NPN transistor consists of three layers of semiconductor material, two of which are doped with different impurities. The two doped layers are known as the emitter and collector layers and the layer between them is known as the base. The base is lightly doped, allowing it to act as a control element and allow it to control the current flow between the emitter and collector layers. The collector layer is heavily doped, allowing it to draw free electrons from the emitter layer. The amount of current that can pass between the emitter and collector layers is controlled by the base current.
One of the primary uses of the KSA1381ES transistor is in analog circuits. It can be used as an amplifier or an analog switch, due to its ability to control the current flow between two or more circuits. Since the base current controls the amount of current that flow between the emitter and collector layers, a KSA1381ES transistor can act as an amplifier when used in an amplification circuit. The circuit is designed such that varying amounts of incoming current will cause variations in the base current, thus allowing for amplification.
The KSA1381ES also finds use in logic circuits for controlling the power supply. When used in a power switching circuit, the transistor can be used to switch either the positive or the negative supply rail. By controlling the base current, the transistor is able to control the gate voltage, which in turn controls the flow of power. The transistor can also be used as a motor control, by controlling the amount of current flowing through the motor.
The KSA1381ES can also be used as a power amplifier due to its ability to handle high currents. The KSA1381ES is also ideal for use as a low noise amplifier, due to its very low noise characteristics. In addition, this transistor can be used in temperature compensation circuits, as a level shifter or even in circuits that require high-frequency signals.
In conclusion, the KSA1381ES is a very versatile single bipolar junction transistor (BJT) that can be used in a variety of analog and digital electronics applications. It provides excellent switching performance and very low noise characteristics. The circuit is designed to switch either the positive or the negative rail, and it can also be used as an amplifier, a digital switch, a level shifter, or in temperature compensation circuits. This makes the KSA1381ES a highly reliable and cost-effective choice for use in a wide variety of electronics applications.
The specific data is subject to PDF, and the above content is for reference
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