FDPF5N50NZF Allicdata Electronics
Allicdata Part #:

FDPF5N50NZF-ND

Manufacturer Part#:

FDPF5N50NZF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 4.2A TO-220F
More Detail: N-Channel 500V 4.2A (Tc) 30W (Tc) Through Hole TO-...
DataSheet: FDPF5N50NZF datasheetFDPF5N50NZF Datasheet/PDF
Quantity: 644
Stock 644Can Ship Immediately
Specifications
Series: UniFET-II™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V
FET Feature: --
Power Dissipation (Max): 30W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
Description

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The FDPF5N50NZF is a insulated-gate field-effect transistor (IGFET) that belongs to the n-channel depletion-mode PowerTrench MOSFET category. It is manufactured using advanced proprietary high cell density DMOS technology, which minimizes conduction losses, allowing the device to remain cool and achieve high power dissipation.

The FDPF5N50NZF is especially suited to repair and replace applications for power and load switch circuit configurations when a low on-resistance, small size, and low gate drive is necessary. Its optimized design makes it compatible with most standard logic level and gate drive circuits, making it easy to use in most applications.

When the FDPF5N50NZF is turned off, it operates as an insulated gate field effect transistor. This occurs when a negative voltage is applied to the gate, creating an electric field between the gate and the channel and preventing current from flowing in the channel. Because the channel is now blocked, no current flows through the transistor.

When the transistor is turned on, it acts as an n-channel depletion-mode PowerTrench MOSFET. This occurs when a positive voltage is applied to the gate, creating an electric field between the gate and the channel allowing current to flow between the source and the drain. This current flow is then used to operate the device and complete the circuit.

The FDPF5N50NZF is designed to handle high voltage and current applications and is extremely power efficient since it only requires a small amount of current applied to the gate to fully turn on the transistor. It is designed to handle peak currents up to 85A with a voltage rating up to 500V and is available in a ON-semiconductor\'s standard small TO-252 (DPAK) package.

The FDPF5N50NZF is commonly used in applications that require load switching, including power supplies, motor controls, and DC-DC applications. It is also used in applications requiring high current and breakdown voltage, like displays, inverters, audio amplifiers, and other power management circuits.

Overall, the FDPF5N50NZF is a reliable load switch IGFET with a low drain-source resistance and small size allowing it to be used in applications that require a high current and voltage ratings without unnecessary bulk or power dissipation. The simplicity and ease of use make it the ideal solution for applications that require load switching, high current and voltage ratings, and power efficiency.

The specific data is subject to PDF, and the above content is for reference

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