Allicdata Part #: | KSA1242YTU-ND |
Manufacturer Part#: |
KSA1242YTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 20V 5A I-PAK |
More Detail: | Bipolar (BJT) Transistor PNP 20V 5A 180MHz 10W Thr... |
DataSheet: | KSA1242YTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 4A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 500mA, 2V |
Power - Max: | 10W |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The KSA1242YTU is a bipolar junction transistor (BJT). These transistors consist of a PN junction between two conductive materials, or "layers," called the emitter and collector. When voltage is applied to the base contact, electrons are injected into the emitter/collector region and are pulled towards the collector. This creates a current that is proportional to the applied base current, and is referred to as the “common-base” current gain.
The KSA1242YTU is a single BJT, meaning that the transistor’s base, emitter and collector are all connected to a single layer of silicon material. This design offers advantages over multi-layer devices such as Darlington transistors, as the current gain is typically higher and the device can switch on faster.
The KSA1242YTU has a wide range of applications. It is commonly used as a voltage amplifier, due to its high current gain and fast switching capabilities. It is also used in designing digital logic circuits, power switching applications and power amplifiers.
The working principle behind the KSA1242YTU is quite straightforward. When a voltage is applied to the base contact of the transistor, it creates an electric field. This field will inject electrons into the emitter/collector region. The current that flows through this region is called the common-base current gain, and is proportional to the applied voltage.
The KSA1242YTU offers great performance and reliability, making it a suitable choice for many types of circuits and applications. Its fast switching capabilities and high current gain make it ideal for use as a voltage amplifier and as a digital logic circuit. In addition, the device has low power dissipation, making it suitable for power switching applications.
The KSA1242YTU is a powerful and reliable device that offers a wide range of applications in many types of circuits. Its high current gain and fast switching capabilities make it an excellent choice for voltage amplification and digital logic circuits. In addition, its low power dissipation and long life make it suitable for many types of power switching applications.
The specific data is subject to PDF, and the above content is for reference
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