STGF30M65DF2 Allicdata Electronics
Allicdata Part #:

STGF30M65DF2-ND

Manufacturer Part#:

STGF30M65DF2

Price: $ 1.01
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT TRENCH 650V 60A TO220FP
More Detail: IGBT Trench Field Stop 650V 60A 38W Through Hole T...
DataSheet: STGF30M65DF2 datasheetSTGF30M65DF2 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1000 +: $ 0.91122
Stock 1000Can Ship Immediately
$ 1.01
Specifications
Series: M
Part Status: Active
Lead Free Status / RoHS Status: --
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Power - Max: 38W
Switching Energy: 300µJ (on), 960µJ (off)
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 31.6ns/115ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 140ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Description

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STGF30M65DF2 is a 600V power transistor of the Insulated Gate Bipolar Transistor (IGBT) family. Originally released by ST Microelectronics, this transistor is categorized as a fast switching power transistor, having more than 1200 volts common emitter blocking voltage and 70 amperes continuous collector current. STGF30M65DF2 is suitable for high power applications, making it ideal for medium to large scale applications.

Working Principle

The key component of STGF30M65DF2 is the Insulated Gate Bipolar Transistor -- an energy-efficient transistor. IGBTs are composed of two transistors: an N-channel MOSFET and a P-channel MOSFET that are linked together and act as a single device. The IGPT transistor has a gate terminal that is located between the two transistors, separating the two transistors from each other electrically. When a voltage is applied to the gate, the transistor turns itself on or off.

The MOSFETs act as main conductors, while the Gate acts as a control terminal. When the Gate is charged positively (charging), electrons flow from the emitter to the collector element. This increases the current and voltage at the collector element and voltage at the emitter element. When the Gate is charged negatively (discharging), the current and voltage at the collector decrease and likewise, the voltage at the emitter decreases. Therefore, theIGPT gives you the flexibility to control the flow of power.

Applications

STGF30M65DF2 is most suitable for medium to large power applications. It has high switching speeds and can handle large currents, making it ideal for high-speed power switching. Some of the most common applications of STGF30M65DF2 are in motor drives, high-end motor control, UPS (uninterrupted power supply), solar inverters and chargers, batteries, and welding equipment.

It can also be used in AC-DC power converters and DC-DC converter applications. It can also be used in AC phase control applications, lighting control applications, and is often used in medical equipment and other industrial equipment. The fast switching speeds and low dynamic losses of this transistor allow for efficient and reliable power switching.

Conclusion

In conclusion, the STGF30M65DF2 power transistor from ST Microelectronics is a 600V transistor, belonging to the IGPT family. It is most suitable for medium to high power switching applications, allowing for efficient and reliable power switching. Its fast switching speeds and low dynamic losses make it ideal for medium and high-speed power switching applications. Further, its high blocking voltage and continuous current make it an ideal choice for high-end motor control and other industrial applications.

The specific data is subject to PDF, and the above content is for reference

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