Allicdata Part #: | FDPF10N50UT-ND |
Manufacturer Part#: |
FDPF10N50UT |
Price: | $ 1.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 8A TO-220F-3 |
More Detail: | N-Channel 500V 8A (Tc) 42W (Tc) Through Hole TO-22... |
DataSheet: | FDPF10N50UT Datasheet/PDF |
Quantity: | 990 |
1 +: | $ 1.54980 |
10 +: | $ 1.39986 |
100 +: | $ 1.12480 |
500 +: | $ 0.87483 |
1000 +: | $ 0.72486 |
Series: | UniFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1130pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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?The FDPF10N50UT is a power MOSFET (metal-oxide-semiconductor field-effect transistor) specifically designed to use in power control applications. A MOSFET works by using a gate to control how much current runs through the channel between the source and the drain. The FDPF10N50UT is a P channel enhancement mode MOSFET created with a low threshold voltage and includes a field-effect mobility of 10 cm²V-sec-1 and built on a silicon substrate.
Application Field
FDPF10N50UT is designed primarily for use in power management applications such as switching regulators, DC-AC inverters, and in motor control circuits. It is also well suited for end applications such as low side switching and DC-DC converters for motor drives and power distribution. The FDPF10N50UT power MOSFET can be used as a shut-off switch in multiple applications, including computers, mobile phones, home audio equipment, appliances, and other electronic devices.
Features
The FDPF10N50UT features a low on-resistance which enables lower switching loss and total harmonic distortion (THD) at higher frequencies. It also includes unique low on-state output capacitance making it suitable for high-side or low-side switching applications. These features make the FDPF10N50UT an excellent choice for high-speed power conversion. It also features a wide operating temperature range, thermally enhanced packaging, and built-in input transistors for soft switching.
Working Principle
The working principle of MOSFET technology is simple. A metal-oxide-semiconductor field-effect transistor is controlled by applying a voltage to the gate electrode, which in turn adjusts the current flow between the source and the drain. When voltage is applied to the gate electrode, it creates an electric field around the gate, which attracts a charge to the gate and forms an “inversion layer” in the silicon. This layer provides a conductive channel between the source and the drain which can be used to control current flow. The FDPF10N50UT is designed with a low-threshold voltage, so as voltage increases, the current will also increase.
In power control applications, the FDPF10N50UT can control the flow of current by adjusting its gate voltage. It can be used to turn the power on and off, or to dim it. This allows for precise control of power distribution, with the added benefit of low power consumption. Additionally, the FDPF10N50UT is designed with high efficiency, making it an excellent choice for applications in which power consumption needs to be kept to a minimum.
Conclusion
The FDPF10N50UT power MOSFET is an excellent choice for power control applications. Its low threshold voltage and low on-state resistance makes it ideal for high speed power conversion. Additionally, its high efficiency makes it suitable for applications where power consumption needs to be kept to a minimum. The FDPF10N50UT can be used in a range of applications, including computers, mobile phones, home audio equipment, appliances, and other electronic devices.
The specific data is subject to PDF, and the above content is for reference
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