Allicdata Part #: | IXTH80N20L-ND |
Manufacturer Part#: |
IXTH80N20L |
Price: | $ 9.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 80A TO-247 |
More Detail: | N-Channel 200V 80A (Tc) 520W (Tc) Through Hole TO-... |
DataSheet: | IXTH80N20L Datasheet/PDF |
Quantity: | 42 |
1 +: | $ 8.38530 |
30 +: | $ 6.87664 |
Series: | Linear™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6160pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 520W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 (IXTH) |
Package / Case: | TO-247-3 |
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Transistors are semiconductor devices that are widely used in a wide range of applications, from amplifying and switching circuits to controlling digital logic. The IXTH80N20L is one such transistor, a Field Effect Transistor (FET). Specifically, it is a single MOSFET, meaning that it is a metal–oxide–semiconductor FET.
The IXTH80N20L FET is a relatively popular device, mainly because it offers very low operation voltage, high input impedance, excellent switching properties and very low on-resistance. It is used in a variety of applications, including switching and amplifier applications.
Working Principle
FETs operate on the principle of field effect, meaning that they can be controlled by the application of a voltage. In the case of the IXTH80N20L, the voltage applied to the gate (G) controls the flow of electrons through the source (S) to the drain (D). If a positive voltage is applied to the gate, then the source-drain current (ID) will increase; if a negative voltage is applied, then the source-drain current will decrease.In a practical application, the source and the gate are connected to a power supply, while the drain is connected to the load. When a positive voltage is applied to the gate, the electric field created by the voltage causes the electric charges in the gate-source channel to move down the channel towards the drain. This increases the conductivity between the source and the drain, and thus increases the current flowing through the device.
The magnitude of the current flowing through the device is determined by the amount of voltage and resistance in the channel. The higher the voltage, the higher the resistance, and thus the higher the current. Conversely, the lower the voltage applied to the gate, the lower the resistance, and thus the lower the current.
The IXTH80N20L FET is an ideal device for switching applications because it can be used to quickly and efficiently switch on or off the current flowing through it. It also has excellent on-state characteristics, meaning that it can be used as a voltage controlled device for application requiring precise control.
Application Fields of the IXTH80N20L
The IXTH80N20L FET is used in a wide range of applications. For example, it can be used in power supply circuits to regulate the voltage applied to a particular load. It is also used in switching power supplies, which are used to provide power to electronic devices. Other applications include relays, amplifiers, and clocks.
It is also used in applications such as radio frequency (RF) communication and in medical instrumentation. The IXTH80N20L is a very versatile device and can be used in a variety of applications where low on-resistance and low input impedance is required.
The IXTH80N20L is also used as an interface between digital logic controllers and peripheral devices, such as motors and servos. The device can be used to control the power applied to such devices, allowing for precise and efficient control.
In conclusion, the IXTH80N20L is a popular FET that is widely used in a variety of applications. It offers excellent switching and on-state characteristics, and its relatively low cost makes it an attractive choice for many applications. It is ideally suited to applications such as power supply regulation, RF communication, medical instrumentation, and digital logic control.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IXTH1N200P3HV | IXYS | 5.04 $ | 21 | MOSFET N-CH 2000V 1A TO-2... |
IXTH1N200P3 | IXYS | 5.04 $ | 45 | MOSFET N-CH 2000V 1A TO-2... |
IXTH15N50L2 | IXYS | -- | 65 | MOSFET N-CH 500V 15A TO-2... |
IXTH24P20 | IXYS | -- | 6 | MOSFET P-CH 200V 24A TO-2... |
IXTH16N20D2 | IXYS | 8.57 $ | 20 | MOSFET N-CH 200V 16A TO-2... |
IXTH30N50L2 | IXYS | 9.03 $ | 23 | MOSFET N-CH 500V 30A TO-2... |
IXTH64N65X | IXYS | 9.09 $ | 18 | MOSFET N-CH 650V 64A TO-2... |
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IXTH3N200P3HV | IXYS | 17.33 $ | 1000 | MOSFET N-CH 2000V 3A TO-2... |
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IXTH150N17T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 175V 150A TO-... |
IXTH12N120 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1200V 12A TO-... |
IXTH152N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 152A TO-2... |
IXTH160N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-2... |
IXTH180N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 180A TO-2... |
IXTH182N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 182A TO-2... |
IXTH200N075T | IXYS | -- | 1000 | MOSFET N-CH 75V 200A TO-2... |
IXTH200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-2... |
IXTH220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-2... |
IXTH220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-2... |
IXTH230N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 230A TO-2... |
IXTH240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-2... |
IXTH250N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 250A TO-2... |
IXTH280N055T | IXYS | -- | 1000 | MOSFET N-CH 55V 280A TO-2... |
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