IXTH60N20L2 Allicdata Electronics
Allicdata Part #:

IXTH60N20L2-ND

Manufacturer Part#:

IXTH60N20L2

Price: $ 10.79
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 60A TO-247
More Detail: N-Channel 200V 60A (Tc) 540W (Tc) Through Hole TO-...
DataSheet: IXTH60N20L2 datasheetIXTH60N20L2 Datasheet/PDF
Quantity: 29
1 +: $ 9.80280
30 +: $ 8.24292
120 +: $ 7.57463
Stock 29Can Ship Immediately
$ 10.79
Specifications
Series: Linear L2™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
FET Feature: --
Power Dissipation (Max): 540W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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The IXTH60N20L2 is a general purpose field effect transistor (FET) with application in various fields. It is a standard P-channel transistor and is popularly used in low-power, fast-switching applications that require high-performance and low-on-state resistance. This device has been specifically designed for ease of use and compatibility with a wide variety of circuits.

The IXTH60N20L2 is a single P-channel FET with a wide range of available current ratings ranging from 0.9 Amps to 30 Amps. This device is capable of operating at a peak voltage of 60 volts and is specifically designed to handle high frequency switching applications. The maximum on-state resistance of the transistor is typically 20mΩ and the gate-source voltage rating is typically -20V. The maximum junction temperature of the transistor is 150°C.

The IXTH60N20L2 has a high level of usability due to its low on-state resistance, which permits a wide range of current to be switched rapidly. The ability of the transistor to operate at high frequencies also allows it to be used in high-speed signal processing applications. The wide range of available current ratings is also a plus, giving designers the flexibility to use it in various applications. This device is also highly suitable for use in logic circuits as it offers fast switching speeds and low power consumption.

The IXTH60N20L2 works according to the principle of field effect. A gate-to-source voltage is applied to the transistor, which creates an electric field within the device. This electric field affects the behavior of the transistor’s junction and modulates the amount of current flowing from the source to the drain. The device is controlled by altering the gate-to-source voltage, which in turn adjusts the electric field within the device and thus modulates the current flow. This makes the device highly useful due to its ability to be dynamically controlled in terms of current flow.

The IXTH60N20L2 is a versatile and highly powerful transistor that can be used in a wide variety of applications. Since it offers low on-state resistance, fast switching speeds and low power consumption, it is suitable for various applications such as switching, power amplifiers, regulated power supplies, logic circuits, phase-locked loops and many other uses. Its versatility and stability make it a popular choice for designers looking to control current flow or switch signals in their circuits.

The specific data is subject to PDF, and the above content is for reference

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