Allicdata Part #: | 1727-1883-2-ND |
Manufacturer Part#: |
BSH103,235 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 0.85A SOT23 |
More Detail: | N-Channel 30V 850mA (Ta) 540mW (Ta) Surface Mount ... |
DataSheet: | BSH103,235 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.06303 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 850mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: | 400mV @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 2.1nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 83pF @ 24V |
FET Feature: | -- |
Power Dissipation (Max): | 540mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB (SOT23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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BSH103,235 is a type of Field-Effect Transistor (or FET) device and it is a single MOSFET. FETs are special types of transistors, distinguished by their ability to control a signal or voltage with a relatively low applied voltage, or gate, placed between the source and drain. MOSFETs are a special type of FET that feature a gate oxide instead of a gate electrode, allowing an even higher degree of control. The BSH103,235 single MOSFET is an especially efficient and powerful type, offering high gain and low gate threshold.
The primary application of the BSH103,235 is for switching applications, as it is able to switch quickly and with minimal effort on the part of the user. This makes it ideal for use in power management, automation systems, and other places where quick and precise switching is required. The device also works well as an amplifier, and has also been used to test transistors and other types of semiconductor devices.
The working principle of the BSH103,235 device is based on the basic principles of FET and MOSFET devices. When the gate is not connected to the source or drain, no current flow is possible, and the device is said to be "off." When the gate is connected to the source, a current will flow between the source and the drain, and the device is "on." One of the features of the BSH103,235 is its low threshold voltage, meaning that it can be switched on using only a small voltage applied to the gate. This feature also allows it to be used in low-voltage applications, such as logic circuits and weak signals. Another feature is its high current gain, meaning that it can supply more current than the low voltage used to switch it on.
In addition to its primary use as a switch and amplifier, the BSH103,235 has also been used in the manufacture of semiconductor devices such as diodes and transistors. By placing the BSH103,235 between two semiconductor devices, it is possible to create a single transistor device with higher performance than would normally be possible. This allows for greater control and efficiency in the manufacturing process.
Overall, the BSH103,235 is an excellent and powerful device, offering a wide range of applications and features. Its low voltage gate threshold makes it suitable for use in a variety of power management applications, and its high current gain makes it ideal for use as an amplifier. It has also been used in the manufacturing of semiconductor devices, offering greater control over the process than is normally possible. The BSH103,235 is an excellent example of the power and versatility of MOSFET devices, and their potential for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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