BSH103,215 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-4319-2-ND |
Manufacturer Part#: |
BSH103,215 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 0.85A SOT23 |
More Detail: | N-Channel 30V 850mA (Ta) 540mW (Ta) Surface Mount ... |
DataSheet: | BSH103,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.08966 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 850mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: | 400mV @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 2.1nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 83pF @ 24V |
FET Feature: | -- |
Power Dissipation (Max): | 540mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB (SOT23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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BSH103,215 Application Field and Working Principle
The BSH103,215 is a family of high-speed p-channel enhancement mode power MOSFETs that have been designed for use in a variety of power switching field applications, such as motor speed control, lighting, and battery charging. This type of FET is chosen for its ability to provide high switching performance at a low overall cost. The device can also provide efficient, fast, low-distortion and stable operation over a wide range of temperatures and voltage ranges.
Application fields
The BSH103,215 FET is typically used in power switching applications such as motor speed control, lighting, and battery charging. This type of FET is available in a variety of package configurations, including single and dual FET’s. It is also an excellent choice for high-frequency switching systems and offers excellent thermal performance. The device is suitable for various applications requiring high power efficiency, fast switching times, high peak currents (up to 3A), and low on-resistance (<20 mΩ). Additionally, it is also suitable for low-voltage applications such as automotive, consumer electronics, computer, audio, and medical applications.
Working Principle
The device consists of a channel made out of a semiconductor material such as silicon, gallium arsenide, or germanium. This is sandwiched between a source of electrons (the anode) and a drain of electrons (the cathode). It is important for the FET to be operated in an enhancement mode with a voltage applied across the source and drain. When the voltage between the source and drain is greater than the threshold voltage, the electrons in the channel are pulled towards the source and drain allowing a current to flow between them. This current flow is controlled by the voltage applied across the source and drain, and the resistance between the source and drain is determined by the width and length of the channel.
Conclusion
The BSH103,215 FET is an excellent choice for high performance, low cost, and power efficiency applications. It is highly suitable for applications requiring fast switching times, high current capability (<3A), and low on-resistance (<20 mΩ). Additionally, its excellent thermal performance makes it a viable solution for a wide range of temperature and voltage ranges.
The specific data is subject to PDF, and the above content is for reference
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