Allicdata Part #: | PN100A_D26Z-ND |
Manufacturer Part#: |
PN100A_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 45V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 500mA 250MHz 625m... |
DataSheet: | PN100A_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 20mA, 200mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 10mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PN100 |
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PN100A_D26Z Application Field and Working Principle
The PN100A_D26Z is a single-bipolar junction transistor (BJT), a type of transistor commonly used in many applications, such as amplification and switching. The device consists of an emitter, a base, and a collector. The base and collector are connected by two passivating layers and separated by a base region. The emitter is connected to the base region using an ohmic contact. In essence, the PN100A_D26Z is designed to behave like a switch when used, allowing electric current to flow between the emitter and collector when a small current is applied to the base.
The PN100A_D26Z is a low voltage device, designed to be used in circuits with low to medium power. It is designed to operate at voltages between 3 V and 15 V with a maximum voltage of 18 V. The maximum collector current is 100 mA, the breakdown voltage is 5 V, and the saturation voltage is 1.5 V. The device has a turn-on delay time of 5 microseconds and a turn-off delay time of 6 microseconds.
The PN100A_D26Z is typically used in amplifier circuits, where it can be used as a digital switch to control the output of an amplifier. In this application, the source voltage is applied to the collector and the output voltage is taken from the emitter. The base voltage controls the current flowing through the device, and thus the output current. The device is also used in switching and control circuits, where it is used to control the flow of current or voltage in a circuit. In this application, the device is usually used as a switch, and the base is used to control the current or voltage.
The PN100A_D26Z has a number of advantages over other types of transistors, such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). These advantages include a lower cost, better power handling capabilities, and better thermal stability. The device is also more reliable than MOSFETs due to its lower leakage current.
The PN100A_D26Z is an ideal device for use in applications requiring low voltage and moderate power. Its low cost and stable performance make it an excellent choice for many applications. It is also a good choice for many amplifier, switching, and control circuits.
In conclusion, the PN100A_D26Z is a single-bipolar junction transistor designed to operate at voltages between 3V and 15V. It is an ideal device for use in many amplifier, switching, and control circuits. It is easy to use, reliable, and cost-effective, and is thus a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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