PN100_D26Z Allicdata Electronics
Allicdata Part #:

PN100_D26Z-ND

Manufacturer Part#:

PN100_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 500mA 250MHz 625m...
DataSheet: PN100_D26Z datasheetPN100_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: PN100
Description

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The PN100_D26Z is a NPN single bipolar junction transistor (BJT) specially designed for high performance applications. It consists of three terminals, namely emitter (E), collector (C) and base (B). It is widely used in audio amplifiers, RF amplifiers and switching applications.

The working principle of the PN100_D26Z can be understood in terms of the distinct characteristics of a BJT. When a BJT is turned on, the base current flows from the base to the emitter. This creates a barrier between the collector and the emitter that prevents current from flowing from collector to emitter. As such, the BJT can be used to control the flow of current between the collector and emitter.

The PN100_D26Z is well suited for applications that require high switching speeds. The transistor features an attractive low saturation voltage of 0.3V and a high current gain of 35-45. It also has a highly symmetrical structure which helps reduce the influence of spurious signal interactions and reduces the noises in the system.

As far as application fields are concerned, the PN100_D26Z is used in various high-performance applications such as amplifier circuits, switching circuits, radio-frequency (RF) amplifier circuits, oscillator circuits, frequency conversion circuits and antenna circuits. It is also used in radio and television receivers, sound amplifiers and power amplifiers. It can also be used as an electromechanical driver, logic gates and voltage regulator circuits.

In conclusion, the PN100_D26Z is an NPN single bipolar junction transistor specially designed for high performance applications. It features a low saturation voltage and high current gain, which makes it suitable for applications that require high switching speeds. It is used in amplifier circuits, switching circuits, RF amplifier circuits, oscillator circuits, frequency conversion circuits and antenna circuits, as well as in radio and television receivers, sound amplifiers and power amplifiers.

The specific data is subject to PDF, and the above content is for reference

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