PN100_D74Z Allicdata Electronics
Allicdata Part #:

PN100_D74Z-ND

Manufacturer Part#:

PN100_D74Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 500mA 250MHz 625m...
DataSheet: PN100_D74Z datasheetPN100_D74Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: PN100
Description

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PN100_D74Z Application Field and Working Principle

The PN100_D74Z is a Single Bipolar Junction Transistor (BJT), also known as a Discrete Semipolar Transistor, featuring an NPN structure built with P-type and N-type semiconductor materials. The PN100_D74Z is primarily used in the amplification and switching purposes. It is a medium power transistor with a peak voltage rating that ranges from 40V to 80V and a maximum current rating of 100mA. It also has a good frequency response and reasonable saturation voltage. The PN100_D74Z has a wide range of applications in various projects such as amplifiers, zero-voltage switching circuits, switching power supplies, and portable audio equipment.

The BJT can be used to build various types of circuits such as amplifiers, switches, voltage regulators and signal converters. The working of this transistor is based on the principle of “electron hole majority-carrier injection”. The operation of BJT involves two basic stages. The first stage is the input stage and the second is the output stage. In the input stage, current is controlled by an input signal applied to the Base terminal. This causes electrons in the Base region to be injected into the Emitter region, thereby creating an inversion layer of charge carriers. The amount of electrons injected into the emitter region is proportional to the amount of current flowing through the Base terminal. These injected electrons move through the collector region and recombine with holes in the Base region. This process is known as recombination.

In the output stage, current flows from the Collector to the Emitter and is proportional to the amount of electrons injected into the Emitter region. This increases the voltage drop across the Collector-Base junction and reduces the forward-bias voltage drop across the Emitter-Base junction. The transistor can be used as an amplifier if the input signal is applied to the Base. The input signal causes a small current to flow through the Base terminal, which in turn causes a larger current to flow through the Collector and Emitter terminals. The amount of output current is dependent upon the amount of input current flowing through the Base. The transistor can also be used as a switch if the Base-Emitter junction is reverse-biased. In this case, the transistor will remain turned off until the input voltage is higher than the Breakdown Voltage (Vbe).

In conclusion, the PN100_D74Z is a suitable Single Bipolar Junction transistor for a wide range of applications. It has a good frequency response, reasonable saturation voltage and can be used in amplifiers, switches and voltage regulators. Furthermore, its operation involves two basic stages namely the input stage and the output stage. The operation of this transistor is based on the principle of “electron hole majority-carrier injection” which enables it to be used in various applications.

The specific data is subject to PDF, and the above content is for reference

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